Invention Grant
- Patent Title: High-throughput ion implanter
- Patent Title (中): 高通量离子注入机
-
Application No.: US13662110Application Date: 2012-10-26
-
Publication No.: US09437392B2Publication Date: 2016-09-06
- Inventor: William T. Weaver , Charles T. Carlson , Joseph C. Olson , James Buonodono , Paul Sullivan
- Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/20 ; H01J37/302 ; H01J37/317 ; H01L21/266 ; H01L21/67 ; H01L31/18

Abstract:
One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.
Public/Granted literature
- US20130108799A1 HIGH-THROUGHPUT ION IMPLANTER Public/Granted day:2013-05-02
Information query