Invention Grant
- Patent Title: Light emitting diode structure
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Application No.: US14816129Application Date: 2015-08-03
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Publication No.: US09444005B2Publication Date: 2016-09-13
- Inventor: Bo-Yu Chen , Po-Hung Tsou , Tzu-Hung Chou
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: LEXTAR ELECTRONICS CORPORATION
- Current Assignee: LEXTAR ELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW102127278A 20130730
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/42 ; H01L33/38

Abstract:
A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.
Public/Granted literature
- US20150340556A1 LIGHT EMITTING DIODE STRUCTURE Public/Granted day:2015-11-26
Information query
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