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公开(公告)号：US09444005B2
公开(公告)日：2016-09-13
申请号：US14816129
申请日：2015-08-03
Applicant: Lextar Electronics Corporation
Inventor： Bo-Yu Chen , Po-Hung Tsou , Tzu-Hung Chou
CPC classification number: H01L33/145 , H01L33/14 , H01L33/38 , H01L33/42
Abstract: A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.
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公开(公告)号：US09117959B2
公开(公告)日：2015-08-25
申请号：US14228319
申请日：2014-03-28
Applicant: Lextar Electronics Corporation
Inventor： Bo-Yu Chen , Po-Hung Tsou , Tzu-Hung Chou
CPC classification number: H01L33/145 , H01L33/14 , H01L33/38 , H01L33/42
Abstract: A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.
Abstract translation: 提供发光二极管结构。 发光二极管结构包括基板，发光多层结构，第一电流阻挡层，第一电流扩展层，第二电流阻挡层和第二电流扩展层。 发光多层结构通过堆叠形成在基板上。 第一电流阻挡层形成在发光多层结构的一部分上。 第一电流扩展层覆盖第一电流阻挡层和发光多层结构。 第二电流阻挡层形成在第一电流扩展层的一部分上。 第二电流阻挡层的正交投影设置在第一电流阻挡层的正交投影中。 第二电流扩展层覆盖第二电流阻挡层和第一电流扩展层。
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Patent Agency Ranking
公开(公告)号：US09130108B2
公开(公告)日：2015-09-08
申请号：US14274953
申请日：2014-05-12
Applicant: Lextar Electronics Corporation
Inventor： Po-Hung Tsou , Tzu-Hung Chou
CPC classification number: H01L33/145 , H01L33/007 , H01L33/42
Abstract: The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.
Abstract translation: 本发明提供一种发光二极管（LED）及其制造方法。 LED包括第一半导体层，发光层，第二半导体层，第一电流扩展层，具有多个氮空位的电流阻挡以及第二电流扩散层，其中第二扩散层包括电流 扩展区域和当前阻塞区域。 通过高功率溅射在第二半导体层的电流阻挡区域上形成电流阻挡区域，以增加电流阻挡区域的电阻并发生电流阻塞的效率。
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公开(公告)号：US20150207031A1
公开(公告)日：2015-07-23
申请号：US14303653
申请日：2014-06-13
Applicant: Lextar Electronics Corporation
Inventor： Po-Hung Tsou
Abstract: A semiconductor light emitting structure is provided. The semiconductor light emitting structure comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer is formed on the substrate. The active layer is formed on a portion of the first semiconductor layer, and the other portion of the first semiconductor layer is exposed and used as a first electrode predetermined area. The second semiconductor layer is formed on the active layer. The second semiconductor layer has a second electrode predetermined area and a micro-structure predetermined area disposed thereon. The micro-structure predetermined area comprises a plurality of concaves and a plurality of protrusions, and each protrusion is correspondingly located within one of the concaves.
Abstract translation: 提供半导体发光结构。 半导体发光结构包括衬底，第一半导体层，有源层和第二半导体层。 第一半导体层形成在基板上。 有源层形成在第一半导体层的一部分上，第一半导体层的另一部分被暴露并用作第一电极预定区域。 第二半导体层形成在有源层上。 第二半导体层具有设置在其上的第二电极预定区域和微结构预定区域。 微结构预定区域包括多个凹部和多个突起，并且每个突起相应地位于一个凹部内。
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公开(公告)号：US09397263B2
公开(公告)日：2016-07-19
申请号：US14207373
申请日：2014-03-12
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Po-Hung Tsou
CPC classification number: H01L33/38 , H01L33/385 , H01L33/42 , H01L2933/0016
Abstract: A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.
Abstract translation: 提供了一种发光二极管。 发光二极管包括N型半导体层，发光层和P型半导体层。 P型电极包括主体部分和延伸部分，其中主体部分设置在P型半导体层的上表面的拐角处，并且延伸部分从主体部分延伸到N型半导体层 沿着与N型半导体层相邻的P型半导体层的侧壁。 N型电极设置在N型半导体层上。 此外，电流阻挡层设置在P型电极的下方。 透明导电层设置在P型半导体层的部分上表面上。
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公开(公告)号：US20150340556A1
公开(公告)日：2015-11-26
申请号：US14816129
申请日：2015-08-03
Applicant: Lextar Electronics Corporation
Inventor： Bo-Yu Chen , Po-Hung Tsou , Tzu-Hung Chou
CPC classification number: H01L33/145 , H01L33/14 , H01L33/38 , H01L33/42
Abstract: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.
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公开(公告)号：US20150034982A1
公开(公告)日：2015-02-05
申请号：US14228319
申请日：2014-03-28
Applicant: Lextar Electronics Corporation
Inventor： Bo-Yu Chen , Po-Hung Tsou , Tzu-Hung Chou
IPC: H01L33/14
CPC classification number: H01L33/145 , H01L33/14 , H01L33/38 , H01L33/42
Abstract: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.
Abstract translation: 提供发光二极管结构。 发光二极管结构包括衬底，发光多层结构，第一电流阻挡层，第一电流扩展层，第二电流阻挡层和第二电流扩展层。 发光多层结构通过堆叠形成在基板上。 第一电流阻挡层形成在发光多层结构的一部分上。 第一电流扩展层覆盖第一电流阻挡层和发光多层结构。 第二电流阻挡层形成在第一电流扩展层的一部分上。 第二电流阻挡层的正交投影设置在第一电流阻挡层的正交投影中。 第二电流扩展层覆盖第二电流阻挡层和第一电流扩展层。
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