Invention Grant
- Patent Title: Multi-step deep reactive ion etching fabrication process for silicon-based terahertz components
- Patent Title (中): 硅基太赫兹组件的多级深反应离子蚀刻制造工艺
-
Application No.: US14253541Application Date: 2014-04-15
-
Publication No.: US09461352B2Publication Date: 2016-10-04
- Inventor: Cecile Jung-Kubiak , Theodore Reck , Goutam Chattopadhyay , Jose Vicente Siles Perez , Robert H. Lin , Imran Mehdi , Choonsup Lee , Ken B. Cooper , Alejandro Peralta
- Applicant: California Institute of Technology
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Gates & Cooper LLP
- Main IPC: G02B6/136
- IPC: G02B6/136 ; H01P3/16 ; H01P11/00

Abstract:
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
Public/Granted literature
- US20140340178A1 MULTI-STEP DEEP REACTIVE ION ETCHING FABRICATION PROCESS FOR SILICON-BASED TERAHERTZ COMPONENTS Public/Granted day:2014-11-20
Information query