Invention Grant
- Patent Title: Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
- Patent Title (中): 铁电薄膜形成用组合物，形成铁电薄膜的方法，以及通过该方法形成的铁电薄膜
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Application No.: US14448224Application Date: 2014-07-31
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Publication No.: US09502636B2Publication Date: 2016-11-22
- Inventor: Jun Fujii , Hideaki Sakurai , Takashi Noguchi , Nobuyuki Soyama
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Julie Tabarovsky
- Priority: JP2008-139623 20080528; JP2008-139641 20080528; JP2008-282849 20081104; JP2008-328101 20081224; JP2009-009818 20090120; JP2009-009819 20090120; JP2009-022638 20090203; JP2009-022641 20090203; JP2009-023278 20090204; JP2009-023280 20090204; JP2009-025681 20090206; JP2009-025683 20090206; JP2009-059019 20090312; JP2009-060348 20090313; JP2009-085819 20090331; JP2009-085830 20090331; JP2009-102815 20090421; JP2009-102817 20090421; JP2009-105076 20090423; JP2009-105883 20090424; JP2009-105885 20090424
- Main IPC: H01L41/318
- IPC: H01L41/318 ; H01L41/187 ; C04B24/40 ; C04B24/42 ; C04B35/624 ; H01L41/18 ; B05D3/02 ; B05D3/04 ; C01G25/00 ; C23C18/12 ; H01G4/12 ; H01G4/20 ; H01L21/02 ; H01L21/316 ; H01L49/02 ; C04B35/491 ; C04B35/493 ; C04B35/632 ; H01B3/14 ; C23C30/00 ; H01L27/108 ; C04B111/92 ; H01L27/115
Abstract:
Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1-z))O3 [wherein 0.9
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