Invention Grant
- Patent Title: Ion trap apparatus and method for manufacturing same
- Patent Title (中): 离子阱装置及其制造方法
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Application No.: US14878375Application Date: 2015-10-08
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Publication No.: US09548179B2Publication Date: 2017-01-17
- Inventor: Dongil Cho , Taehyun Kim , Jongkeon Yoon , Byoungdoo Choi , Seokjun Hong , Minjae Lee
- Applicant: SK TELECOM CO., LTD. , SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Applicant Address: KR Seoul KR Seoul
- Assignee: SK TELECOM CO., LTD.,SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee: SK TELECOM CO., LTD.,SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee Address: KR Seoul KR Seoul
- Agency: Hauptman Ham, LLP
- Priority: KR10-2013-0121955 20131014
- Main IPC: H01J49/06
- IPC: H01J49/06 ; H01J9/14 ; H01L27/18 ; H01J3/00 ; H01J49/00 ; H01J49/42

Abstract:
An ion trap device includes a substrate over which at least one central DC electrode, an RF electrode and at least one side electrode are disposed. The central DC electrode includes a DC connector pad and a DC rail connected to the DC connector pad. The RF electrode includes at least one RF rail located adjacent to the DC rail and an RF pad connected to the at least one RF rail. The RF electrode is disposed between the central DC electrode and the side electrode. At least one pair of electrodes among the central DC electrode, the RF electrode and the side electrode have round corners facing each other.
Public/Granted literature
- US20160027604A1 ION TRAP APPARATUS AND METHOD FOR MANUFACTURING SAME Public/Granted day:2016-01-28
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