Invention Grant
US09548179B2 Ion trap apparatus and method for manufacturing same 有权
离子阱装置及其制造方法

Ion trap apparatus and method for manufacturing same
Abstract:
An ion trap device includes a substrate over which at least one central DC electrode, an RF electrode and at least one side electrode are disposed. The central DC electrode includes a DC connector pad and a DC rail connected to the DC connector pad. The RF electrode includes at least one RF rail located adjacent to the DC rail and an RF pad connected to the at least one RF rail. The RF electrode is disposed between the central DC electrode and the side electrode. At least one pair of electrodes among the central DC electrode, the RF electrode and the side electrode have round corners facing each other.
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