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US09583655B2 Method of making photovoltaic device having high quantum efficiency 有权
制造具有高量子效率的光电器件的方法

Method of making photovoltaic device having high quantum efficiency
Abstract:
A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.
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