Invention Grant
US09583655B2 Method of making photovoltaic device having high quantum efficiency
有权
制造具有高量子效率的光电器件的方法
- Patent Title: Method of making photovoltaic device having high quantum efficiency
- Patent Title (中): 制造具有高量子效率的光电器件的方法
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Application No.: US14048086Application Date: 2013-10-08
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Publication No.: US09583655B2Publication Date: 2017-02-28
- Inventor: Tzu-Huan Cheng
- Applicant: TSMC Solar Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L31/18 ; H01L31/032 ; H01L31/0749

Abstract:
A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.
Public/Granted literature
- US20150096609A1 METHOD OF MAKING PHOTOVOLTAIC DEVICE HAVING HIGH QUANTUM EFFICIENCY Public/Granted day:2015-04-09
Information query
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