Invention Grant
- Patent Title: Data writing method, memory control circuit unit and memory storage apparatus
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Application No.: US14038780Application Date: 2013-09-27
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Publication No.: US09619380B2Publication Date: 2017-04-11
- Inventor: Chih-Kang Yeh
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW102130249A 20130823
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A data writing method for a memory storage apparatus having a first buffer memory, a second buffer memory and a rewritable non-volatile memory module is provided, and the transmission bandwidth of the first buffer memory is larger than the transmission bandwidth of the second buffer memory. The method includes: receiving a write command and first data thereof; determining whether the first data belongs to the successive big data; if the first data belongs to the successive big data, temporarily storing the first data into a first data buffer area of the first buffer memory, writing the first write data from the first data buffer area to the rewritable non-volatile memory module; and if the first data does not belongs to the successive big data, temporarily storing the first data into a second data buffer area of the second buffer memory.
Public/Granted literature
- US20150058531A1 DATA WRITING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS Public/Granted day:2015-02-26
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