Invention Grant
- Patent Title: Emitter structure, gas ion source and focused ion beam system
-
Application No.: US14830106Application Date: 2015-08-19
-
Publication No.: US09640361B2Publication Date: 2017-05-02
- Inventor: Anto Yasaka , Yasuhiko Sugiyama , Hiroshi Oba
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-063707 20130326
- Main IPC: G21K5/04
- IPC: G21K5/04 ; H01J27/26 ; H01J37/08 ; H01J1/15 ; H01J27/02 ; H01J1/18 ; H01J3/04
Abstract:
A focused ion beam system includes a gas ion source and an emitter structure. The emitter structure includes a pair of conductive pins fixed to a base member, a filament connected between the pair of conductive pins, and an emitter which has a tip end with one atom or three atoms and which is connected to the filament. A supporting member is fixed to the base material, and the emitter is connected to the supporting member.
Public/Granted literature
- US20150357147A1 EMITTER STRUCTURE, GAS ION SOURCE AND FOCUSED ION BEAM SYSTEM Public/Granted day:2015-12-10
Information query
