Invention Grant
- Patent Title: Method for data management and memory storage device and memory control circuit unit
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Application No.: US14162784Application Date: 2014-01-24
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Publication No.: US09652330B2Publication Date: 2017-05-16
- Inventor: Chih-Kang Yeh
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW102143487A 20131128
- Main IPC: G06F12/14
- IPC: G06F12/14 ; G06F11/14

Abstract:
A method for data management and a memory storage device and a memory control circuit unit thereof. The method includes: configuring a NVRAM and a VRAM; storing first data which includes writing data from a host system in the NVRAM; storing second data read from a rewritable non-volatile memory module in the VRAM; when the memory storage device is re-powered on after power failure, reading the first data from the NVRAM, so as to write the writing data into the rewritable non-volatile memory module.
Public/Granted literature
- US20150149702A1 METHOD FOR DATA MANAGEMENT AND MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2015-05-28
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