Invention Grant
- Patent Title: Writing method, memory controller and memory storage device
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Application No.: US13950284Application Date: 2013-07-25
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Publication No.: US09652378B2Publication Date: 2017-05-16
- Inventor: Kuo-Hwa Ho , Kheng-Chong Tan
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW102115080A 20130426
- Main IPC: G06F13/12
- IPC: G06F13/12 ; G06F13/38 ; G06F12/02

Abstract:
A writing method, a memory controller and a memory storage device are provided. The writing method includes steps of: configuring logical addresses to map to part of physical programming units in a storage area, wherein at least one of the physical programming units stores a valid data; transmitting a first write command for writing data having a first data length to at least one of the physical programming units; receiving a status signal; and selecting a spare physical erasing unit and copying the valid data having a second data length to the spare physical erasing unit, after transmitting the first write command and before receiving the status signal, wherein the first data length is not greater than the second data length. Therefore, it prevents a host system from waiting too long when writing data.
Public/Granted literature
- US20140325119A1 WRITING METHOD, MEMORY CONTROLLER AND MEMORY STORAGE DEVICE Public/Granted day:2014-10-30
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