Invention Grant
- Patent Title: Memory interface, memory control circuit unit, memory storage device and clock generation method
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Application No.: US15220403Application Date: 2016-07-27
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Publication No.: US09659618B1Publication Date: 2017-05-23
- Inventor: Ming-Chien Huang
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW105118184A 20160608
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G11C7/10 ; G11C8/18 ; H03K19/00 ; G06F3/06

Abstract:
A memory interface, a memory control circuit unit, a memory storage device and a clock generation method are provided. The method includes: receiving a first data strobe signal and a second data strobe signal from a volatile memory, where the first data strobe signal and the second data strobe signal are differential signals corresponding to each other; if a relative relation between a first voltage value of the first data strobe signal and a reference voltage value of a reference voltage signal conforms to a default condition, generating a clock signal in response to the first data strobe signal and the second data strobe signal; and sampling a data signal from the volatile memory based on a raising edge and a falling edge of the clock signal. Thereby, an accuracy for sampling the data signal from the volatile memory can be improved.
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