Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US14727786Application Date: 2015-06-01
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Publication No.: US09685586B2Publication Date: 2017-06-20
- Inventor: Chi-Feng Huang , Ching-Liang Lin , Shen-Jie Wang , Jyun-De Wu , Yu-Chu Li , Chun-Chieh Lee
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: Jianq Chyun IP Office
- Priority: TW101143115A 20121119
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L33/06 ; H01L33/30 ; H01L33/36 ; H01S5/343 ; H01S5/323 ; H01L33/02 ; H01L33/14 ; H01L33/32 ; H01L33/00 ; H01L33/12
Abstract:
A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0
Public/Granted literature
- US20150263226A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2015-09-17
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