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    LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210391519A1

    公开(公告)日：2021-12-16

    申请号：US17344872

    申请日：2021-06-10

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chi-Hao Cheng

    IPC: H01L33/62 ,  H01L33/22 ,  H01L33/46 ,  H01L33/40

    Abstract: A light emitting device includes a growth substrate, a light emitting component, a first conductive bump and a second conductive bump. The light emitting component is disposed on the growth substrate, including a first type semiconductor layer, a second type semiconductor layer, a light emitting layer, an ohmic contact layer, a first conductor layer, and a second conductor layer. The light emitting layer and the second type semiconductor layer are penetrated by a trench. The ohmic contact layer is disposed on the first type semiconductor layer and is disposed in the trench. The ohmic contact layer is electrically connected to the first type semiconductor layer. The first conductor layer is disposed on the first type semiconductor layer and is disposed in the trench. The first conductor layer covers the ohmic contact layer. The second conductor layer is disposed on the second type semiconductor layer, and is electrically connected to the second type semiconductor layer. A manufacturing method of the light emitting device is also provided.

    Manufacturing method
    3.
    发明授权
    Manufacturing method 有权

    公开(公告)号：US10957674B2

    公开(公告)日：2021-03-23

    申请号：US16699805

    申请日：2019-12-02

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Wei Hung ,  Jui-Fu Chang ,  Chin-Hua Hung ,  Yu-Feng Lin

    IPC: H01L25/075 ,  H01L33/60 ,  H01L33/50 ,  H01L33/56 ,  H01L33/54 ,  H01L33/62 ,  H01L33/48

    Abstract: A manufacturing method is provided. The manufacturing method includes the following steps. Firstly, a substrate and a light-emitting component are provided, wherein the light-emitting component is disposed on the substrate. Then, a wavelength conversion layer is provided, wherein the wavelength conversion layer includes a high-density phosphor layer and a low-density phosphor layer. Then, the high-density phosphor layer is adhered to the light-emitting component by an adhesive. Then, a reflective layer is formed above the substrate, wherein the reflective layer covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion layer.

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200220050A1

    公开(公告)日：2020-07-09

    申请号：US16705255

    申请日：2019-12-06

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Kai-Shun Kang ,  Tung-Lin Chuang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Chih-Ming Shen ,  Jing-En Huang

    IPC: H01L33/46 ,  H01L33/00 ,  H01L33/14 ,  H01L33/38

    Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

    Electrode pad structure of a light emitting diode
    6.
    发明授权
    Electrode pad structure of a light emitting diode 有权

    公开(公告)号：US10608144B2

    公开(公告)日：2020-03-31

    申请号：US15975743

    申请日：2018-05-09

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/00 ,  H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62 ,  H01L33/40 ,  H01L33/36

    Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

    Method for manufacturing light emitting unit
    7.
    发明授权
    Method for manufacturing light emitting unit 有权

    公开(公告)号：US10573779B2

    公开(公告)日：2020-02-25

    申请号：US16231914

    申请日：2018-12-24

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

    IPC: H01L33/00 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H05B33/08 ,  H01L33/48 ,  H01L33/64 ,  H01L27/15

    Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

    LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20190165232A1

    公开(公告)日：2019-05-30

    申请号：US16180071

    申请日：2018-11-05

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Wei Hung ,  Chin-Hua Hung ,  Xun-Xain Zhan ,  Chuan-Yu Liu ,  Yu-Feng Lin

    IPC: H01L33/62 ,  H01L33/50 ,  H01L33/64

    Abstract: A light emitting device including a first light emitting unit, a second light emitting unit, a heat dissipation substrate, a plurality of first bumps and a plurality of second bumps is provided. The heat dissipation substrate is disposed between the first light emitting unit and the second light emitting unit. The first bumps are connected between the first light emitting unit and the heat dissipation substrate. The second bumps are connected between the second light emitting unit and the heat dissipation substrate.

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