Invention Grant
- Patent Title: Techniques for handling high voltage circuitry in an integrated circuit
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Application No.: US15294588Application Date: 2016-10-14
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Publication No.: US09755647B1Publication Date: 2017-09-05
- Inventor: Andy Lee , Herman Schmit
- Applicant: Altera Corporation
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G06F7/38
- IPC: G06F7/38 ; H03K19/173 ; H03K19/177

Abstract:
An integrated circuit formed using a semiconductor substrate may include a logic circuit and a switch circuit, whereby the logic circuit operates at a first power supply voltage and the switch circuit operates at a second power supply voltage that is greater than the first power supply voltage. The logic circuit may be formed within a first triple well structure within the semiconductor substrate and is supplied with a first bias voltage. The switch circuit may be formed within a second triple well structure that is electrically isolated from the first triple well structure within the semiconductor substrate and is supplied with a second bias voltage. The switch circuit may receive a control signal that controls the first bias voltage and the second power supply voltage to turn off a transistor in the logic circuit during a programming operation of the integrated circuit.
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