Invention Grant
- Patent Title: Patterning process
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Application No.: US15176967Application Date: 2016-06-08
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Publication No.: US09760010B2Publication Date: 2017-09-12
- Inventor: Jun Hatakeyama , Teppei Adachi
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2015-116739 20150609
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/38 ; G03F7/16 ; C08F220/22 ; C08F220/24 ; G03F7/32 ; C08F220/38 ; G03F7/26 ; C08L33/16 ; G03F7/20 ; C08F220/26 ; B05D3/04 ; B05D3/00 ; H01L21/027 ; B05D1/00 ; G03F7/004 ; G03F7/039 ; G03F7/11 ; H01L21/308
Abstract:
A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.
Public/Granted literature
- US20160363866A1 PATTERNING PROCESS Public/Granted day:2016-12-15
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