Invention Grant
- Patent Title: Free form fracturing method for electronic or optical lithography using resist threshold control
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Application No.: US15033016Application Date: 2014-10-27
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Publication No.: US09891519B2Publication Date: 2018-02-13
- Inventor: Serdar Manakli , Luc Martin
- Applicant: ASELTA NANOGRAPHICS
- Applicant Address: FR Grenoble
- Assignee: Aselta Nanographics
- Current Assignee: Aselta Nanographics
- Current Assignee Address: FR Grenoble
- Agency: Baker Hostetler LLP
- Priority: EP13306483 20131030
- International Application: PCT/EP2014/072948 WO 20141027
- International Announcement: WO2015/063006 WO 20150507
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/70 ; H01J37/302 ; H01J37/317 ; G03F7/20 ; G03F1/68

Abstract:
A computer implemented method of fracturing free form target design into elementary shots for defined roughness of the contour comprises determining a first set of shots which pave the target design and determining a second set of shots to fill the gaps. The dose levels of overlapping shots in the first or second sets of shots are determined so the compounded dose is adequate to the resist threshold, considering the proximity effect of the actual imprint of shots on the insulated target. A dose geometry modulation is applied and rounded shot prints are produced by shots not circular that may overlap. The degree of overlap is determined as a function of desired optimization of fit criteria between a printed contour and the contour of the desired pattern. Placements and dimensions of the shots are determined by a plurality of fit criteria between printed contour and contour of the desired pattern.
Public/Granted literature
- US20160252807A1 FREE FORM FRACTURING METHOD FOR ELECTRONIC OR OPTICAL LITHOGRAPHY USING RESIST THRESHOLD CONTROL Public/Granted day:2016-09-01
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