Invention Grant
- Patent Title: Data writing method, memory control circuit unit and memory storage apparatus
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Application No.: US15603427Application Date: 2017-05-23
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Publication No.: US09947412B1Publication Date: 2018-04-17
- Inventor: Chun-Yang Hu
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW106110328A 20170328
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/14 ; G11C16/26 ; G11C16/08 ; G11C11/56

Abstract:
A data writing method for a rewritable non-volatile memory module is provided. The method includes recording a plurality of characteristic parameters corresponding to a plurality of data to be programmed; arranging the data according to the characteristic parameters and identifying frequently-read data among the plurality of data according to the characteristic parameters, and programming the frequently-read data into a first physical programming unit of a rewritable non-volatile memory module, wherein a time for reading data from the first physical programming unit is less than a time for reading data from a second physical programming unit of the rewritable non-volatile memory module. Accordingly, the reading performance for the data can be effectively improved.
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