Invention Grant
- Patent Title: Memory management method, memory control circuit unit and memory storage device
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Application No.: US15140500Application Date: 2016-04-28
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Publication No.: US09965400B2Publication Date: 2018-05-08
- Inventor: Kok-Yong Tan
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW105108029A 20160316
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/121 ; G06F3/06 ; G06F12/02 ; G06F12/1009

Abstract:
A memory management method for a rewritable non-volatile memory module is provided. The memory management method includes using a first management mode to manage the rewritable non-volatile memory module after the rewritable non-volatile memory module is powered on; and using a second management mode to manage the rewritable non-volatile memory module if a shut down command is received from a host system, wherein the second management mode is different from the first management mode and the second management mode executes at least one mandatory processing procedure in background.
Public/Granted literature
- US20170269873A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2017-09-21
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