Invention Grant
- Patent Title: Semiconductor substrate, semiconductor module and method for manufacturing the same
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Application No.: US15725144Application Date: 2017-10-04
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Publication No.: US09966333B2Publication Date: 2018-05-08
- Inventor: Li-Chuan Tsai , Chih-Cheng Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaosiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaosiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K1/16 ; H05K1/09 ; H05K1/03 ; H05K7/00 ; H05K1/18 ; H01L23/498 ; H05K1/02 ; H01L21/48 ; H05K3/00 ; H05K3/22 ; H05K3/36 ; H05K3/40 ; H01L23/00

Abstract:
A semiconductor substrate includes: (1) a first dielectric structure having a first surface and a second surface opposite the first surface; (2) a second dielectric structure having a third surface and a fourth surface opposite the third surface, wherein the fourth surface faces the first surface, the second dielectric structure defining a through hole extending from the third surface to the fourth surface, wherein a cavity is defined by the through hole and the first dielectric structure; (3) a first patterned conductive layer, disposed on the first surface of the first dielectric structure; and (4) a second patterned conductive layer, disposed on and contacting the second surface of the first dielectric structure and including at least one conductive trace, wherein the first dielectric structure defines at least one opening, and a periphery of the opening corresponds to a periphery of the through hole of the second dielectric structure.
Public/Granted literature
- US20180033719A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-02-01
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