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    Method of manufacturing a micro machine device
    2.
    发明专利
    Method of manufacturing a micro machine device 审中-公开

    公开(公告)号：JP2010508167A

    公开(公告)日：2010-03-18

    申请号：JP2009535072

    申请日：2007-10-31

    Applicant: アーエスエムエル・ネザーランズ・ベスローテン・フェンノートシャップASML Netherlands B.V. ,  アイメックImec

    Inventor： アン・ウィトフルーウ ,  リュック・ハスペスラーフフ

    IPC: B81C1/00

    CPC classification number: H01L21/324 ,  B81C1/00246 ,  B81C2203/0735 ,  Y10T428/24612

    Abstract: 本発明は、電気回路を含む基板（１０）の上に、少なくとも１つのマイクロマシン構造を含むマイクロマシンデバイスを、下方の電気回路に影響を与えることなく作製する方法を提供する。 この方法は、電気回路を含む基板（１０）の上に、保護層（１５）を形成する工程と、少なくとも１つのマイクロマシン構造を形成するための複数のパターニングされた層を保護層（１５）の上に形成する工程であって、複数のパターニングされた層は、少なくとも１つの犠牲層（１８）を含む工程と、その後に、犠牲層（１８）の少なくとも一部を除去して、少なくとも１つのマイクロマシン構造を開放する工程とを含む。 この方法は、更に、保護層（１５）を形成する前に、マイクロマシンデバイスの製造中に使用される最高温度より高い温度で基板（１０）をアニールする工程を含み、アニールは、その後の製造工程中に、保護層（１５）の下での気体の形成を防止する。 本発明は、また、本発明の具体例にかかる方法で得られたマイクロマシンデバイスを提供する。

    Definition of illumination light source shape for optical lithography
    6.
    发明专利
    Definition of illumination light source shape for optical lithography 有权
    光学光刻的照明光源形状的定义

    公开(公告)号：JP2013065018A

    公开(公告)日：2013-04-11

    申请号：JP2012204768

    申请日：2012-09-18

    Applicant: Imec ,  アイメックImec ,  Asml Netherlands Bv ,  アーエスエムエル・ネザーランズ・ベスローテン・フェンノートシャップASML Netherlands B.V.

    Inventor： IWASE KAZUYA ,  PETER DE BISSCHOP

    IPC: G03F1/36 ,  H01L21/027

    CPC classification number: G03F7/70125 ,  G03F1/36 ,  G03F7/70425 ,  G03F7/70433 ,  G03F7/70441

    Abstract: PROBLEM TO BE SOLVED: To provide an excellent method and system for determining lithography process conditions.SOLUTION: Disclosed are method and system that determine the lithography process conditions for lithography process. After input is acquired, first optimization as to illumination light source characteristics and mask design is carried out under conditions in which a non-rectangular sub resolution assist characteristic part is allowed. Then the mask design is optimized in one or more additional optimizations in which only a rectangular sub resolution assist characteristic part is allowed. Consequently, an excellent lithographic process is obtained and complexity of the mask design is limited.

    Abstract translation: 要解决的问题：提供用于确定光刻工艺条件的优良方法和系统。 解决方案：公开了确定光刻工艺的光刻工艺条件的方法和系统。 在获取输入之后，在允许非矩形子分辨率辅助特征部分的条件下执行关于照明光源特性和掩模设计的第一优化。 然后，在一个或多个其中仅允许矩形子分辨率辅助特征部分的附加优化中对面罩设计进行优化。 因此，获得优异的光刻工艺，并且掩模设计的复杂性受到限制。 版权所有（C）2013，JPO＆INPIT

    APPARATUS USING MULTIPLE BEAMS OF CHARGED PARTICLES
    7.
    发明申请
    APPARATUS USING MULTIPLE BEAMS OF CHARGED PARTICLES 有权

    公开(公告)号：US20250157783A1

    公开(公告)日：2025-05-15

    申请号：US19025881

    申请日：2025-01-16

    Applicant: ASML Netherlands B.V.

    Inventor： Xuerang HU ,  Weiming REN ,  Xuedong LIU ,  Zhong-wei CHEN

    IPC: H01J37/147 ,  H01J37/12 ,  H01J37/26

    Abstract: Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

    METHOD FOR FOCUS METROLOGY AND ASSOCIATED APPARATUSES
    8.
    发明申请
    METHOD FOR FOCUS METROLOGY AND ASSOCIATED APPARATUSES 有权

    公开(公告)号：US20250147435A1

    公开(公告)日：2025-05-08

    申请号：US18690979

    申请日：2022-08-26

    Applicant: ASML Netherlands B.V.

    Inventor： Marie-Claire VAN LARE ,  Wilhelmus Patrick Elisabeth Maria OP T ROOT

    IPC: G03F7/00

    Abstract: Disclosed is a method for determining a focus parameter from a target on a substrate. The target comprises an isofocal first sub-target and a second non-isofocal sub-target. The method comprises obtaining a first measurement signal relating to measurement of the first sub-target, a second measurement signal relating to measurement of the second sub-target and at least one trained relationship and/or model which relates at least said second measurement signal to said focus parameter. A value for said focus parameter is determined from said first measurement signal, second measurement signal and said at least one trained relationship and/or model.

    ABERRATION IMPACT SYSTEMS, MODELS, AND MANUFACTURING PROCESSES
    10.
    发明申请
    ABERRATION IMPACT SYSTEMS, MODELS, AND MANUFACTURING PROCESSES 有权

    公开(公告)号：US20250138433A1

    公开(公告)日：2025-05-01

    申请号：US19009546

    申请日：2025-01-03

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Xingyue PENG ,  Zhan SHI ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Gerui LIU

    IPC: G03F7/00

    Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

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