公开(公告)号：WO2006076086A3

公开(公告)日：2009-04-16

申请号：PCT/US2005043552

申请日：2005-12-02

Applicant: IBM ,  CALLEGARI ALESSANDRO C ,  GRIBELYUK MICHAEL A ,  LACEY DIANNE L ,  MCFEELY FENTON R ,  SAENGER KATHERINE L ,  ZAFAR SUFI

Inventor： CALLEGARI ALESSANDRO C ,  GRIBELYUK MICHAEL A ,  LACEY DIANNE L ,  MCFEELY FENTON R ,  SAENGER KATHERINE L ,  ZAFAR SUFI

IPC: H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/4966 ,  C23C14/0036 ,  C23C14/0635 ,  H01L21/28088 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

Abstract: A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000°C allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.

Abstract translation: 提供了包含TiC的复合金属，其是在包括高k电介质和界面层的栅极堆叠上具有约4.75至约5.3，优选约5e的功函数的功函数的热电稳定的p型金属，以及 制造TiC复合金属的方法。 此外，本发明的TiC金属化合物在1000℃下是非常有效的氧扩散阻挡层，在p-金属氧化物半导体（pMOS）器件中允许非常有侵蚀性的等效氧化物厚度（EOT）和低于14的反型层厚度标度。

公开(公告)号：WO2006076086A2

公开(公告)日：2006-07-20

申请号：PCT/US2005/043552

申请日：2005-12-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CALLEGARI, Alessandro C. ,  GRIBELYUK, Michael A. ,  LACEY, Dianne L. ,  MCFEELY, Fenton R. ,  SAENGER, Katherine L. ,  ZAFAR, Sufi

Inventor： CALLEGARI, Alessandro C. ,  GRIBELYUK, Michael A. ,  LACEY, Dianne L. ,  MCFEELY, Fenton R. ,  SAENGER, Katherine L. ,  ZAFAR, Sufi

IPC: H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/4966 ,  C23C14/0036 ,  C23C14/0635 ,  H01L21/28088 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

Abstract: A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000°C allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.

Abstract translation: 提供了包含TiC的复合金属，其是具有约4.75至约5.3，优选约5e的功函数的p型金属，其在包含高k电介质和界面层的栅叠层上是热稳定的，以及 制造TiC复合金属的方法。 此外，本发明的TiC金属化合物在1000℃下是非常有效的氧扩散阻挡层，允许在p-金属氧化物半导体（pMOS）器件中具有非常强大的等效氧化物厚度（EOT）和反型层厚度缩小至14以下。

公开(公告)号：WO2006076087A3

公开(公告)日：2006-07-20

申请号：PCT/US2005/043555

申请日：2005-12-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CALLEGARI, Alessandro C. ,  FRANK, Martin M. ,  JAMMY, Rajarao ,  LACEY, Dianne L. ,  MCFEELY, Fenton R. ,  ZAFAR, Sufi

Inventor： CALLEGARI, Alessandro C. ,  FRANK, Martin M. ,  JAMMY, Rajarao ,  LACEY, Dianne L. ,  MCFEELY, Fenton R. ,  ZAFAR, Sufi

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/336

Abstract: A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000°C), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.

公开(公告)号：WO2006076087A2

公开(公告)日：2006-07-20

申请号：PCT/US2005043555

申请日：2005-12-02

Applicant: IBM ,  CALLEGARI ALESSANDRO C ,  FRANK MARTIN M ,  JAMMY RAJARAO ,  LACEY DIANNE L ,  MCFEELY FENTON R ,  ZAFAR SUFI

Inventor： CALLEGARI ALESSANDRO C ,  FRANK MARTIN M ,  JAMMY RAJARAO ,  LACEY DIANNE L ,  MCFEELY FENTON R ,  ZAFAR SUFI

IPC: H01L29/94

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

Abstract: A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000°C), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.

Abstract translation: 包含HfSiN的复合金属，其是具有约4.0至约4.5，优选约4.3的功函数的n型金属，其在包含高k电介质和界面层的栅极堆叠上是热稳定的。 此外，在高温（约1000℃）的高温下退火HfSiN /高k电介质/界面层之后，界面层的减少，因此栅叠层产生非常小的等效氧化物厚度 （12经典），使用TaSiN无法实现。

公开(公告)号：WO2006022856A3

公开(公告)日：2007-01-11

申请号：PCT/US2005009112

申请日：2005-03-17

Applicant: IBM ,  CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

Inventor： CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

IPC: H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract translation: 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其在不影响（增加）SiCOH薄膜的介电常数的情况下实现。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：WO2006022856A2

公开(公告)日：2006-03-02

申请号：PCT/US2005/009112

申请日：2005-03-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CALLEGARI, Alessandro, C. ,  COHEN, Stephan, A. ,  DOANY, Fuad, E.

Inventor： CALLEGARI, Alessandro, C. ,  COHEN, Stephan, A. ,  DOANY, Fuad, E.

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract translation: 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其在不影响（增加）SiCOH薄膜的介电常数的情况下实现。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。