DUV LASER ANNEALING AND STABILIZATION OF SiCOH FILMS
    5.
    发明申请
    DUV LASER ANNEALING AND STABILIZATION OF SiCOH FILMS 审中-公开
    DUV激光退火和SiCOH膜的稳定性

    公开(公告)号:WO2006022856A3

    公开(公告)日:2007-01-11

    申请号:PCT/US2005009112

    申请日:2005-03-17

    Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

    Abstract translation: 与现有技术的电介质膜相比,包括具有改进的绝缘性能的Si,C,O和H原子(以下称为SiCOH)的电介质膜的制造方法,包括不经受本发明的深层超导体的现有技术的SiCOH介电膜, 紫色(DUV)。 改进的性能包括减少的电流泄漏,其在不影响(增加)SiCOH薄膜的介电常数的情况下实现。 根据本发明,通过使沉积的SiCOH电介质膜进行DUV激光退火,获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C,从而提高漏电流。

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