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    LENS ARRAY OPTICAL COUPLING TO PHOTONIC CHIP
    1.
    发明申请
    LENS ARRAY OPTICAL COUPLING TO PHOTONIC CHIP 审中-公开
    透镜阵列光耦合到光电芯片

    公开(公告)号：WO2013025327A3

    公开(公告)日：2014-05-08

    申请号：PCT/US2012048570

    申请日：2012-07-27

    Applicant: IBM ,  DOANY FUAD E ,  LEE BENJAMIN G ,  SCHOW CLINT L

    Inventor： DOANY FUAD E ,  LEE BENJAMIN G ,  SCHOW CLINT L

    IPC: G02B6/32

    CPC classification number: G02B6/32 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4244 ,  G02B6/425 ,  H01L21/302

    Abstract: A photonic integrated circuit apparatus is disclosed. The apparatus includes a photonic chip (200) and a lens array coupling element (100). The photonic chip includes a waveguide (202) at a side edge surface of the photonic chip. The lens array coupling element is mounted on a top surface of the photonic chip and on the side edge surface. The coupling element includes a lens array (102) that is configured to modify spot sizes of light traversing to or from the waveguide. The coupling element further includes an overhang (104) on a side of the coupling element that opposes the lens array and that abuts the top surface of the photonic chip. The overhang includes a vertical stop surface (112) that has a depth configured to horizontally align an edge of the waveguide with a focal length of the lens array and that vertically aligns focal points of the lens array with the edge of the waveguide.

    Abstract translation: 公开了一种光子集成电路装置。 该装置包括光子芯片（200）和透镜阵列耦合元件（100）。 光子芯片包括在光子芯片的侧边缘表面处的波导（202）。 透镜阵列耦合元件安装在光子芯片的顶表面上并在侧边缘表面上。 耦合元件包括透镜阵列（102），其被配置为修改横穿波导或从波导穿过的光的光斑尺寸。 耦合元件还包括在耦合元件的与透镜阵列相对并且邻接光子芯片的顶表面的一侧上的突出部（104）。 突出部分包括垂直的止动表面（112），该垂直的止动表面（112）具有被配置为水平地对准波导的边缘与透镜阵列的焦距并使透镜阵列的焦点与波导的边缘垂直对准的深度。

    LENS ARRAY OPTICAL COUPLING TO PHOTONIC CHIP
    2.
    发明申请
    LENS ARRAY OPTICAL COUPLING TO PHOTONIC CHIP 审中-公开
    透镜阵列光耦合到光电芯片

    公开(公告)号：WO2013025327A2

    公开(公告)日：2013-02-21

    申请号：PCT/US2012/048570

    申请日：2012-07-27

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  DOANY, Fuad, E. ,  LEE, Benjamin, G. ,  SCHOW, Clint, L.

    Inventor： DOANY, Fuad, E. ,  LEE, Benjamin, G. ,  SCHOW, Clint, L.

    IPC: G02B6/32 ,  H01L21/302

    CPC classification number: G02B6/32 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4244 ,  G02B6/425 ,  H01L21/302

    Abstract: A photonic integrated circuit apparatus is disclosed. The apparatus includes a photonic chip (200) and a lens array coupling element (100). The photonic chip includes a waveguide (202) at a side edge surface of the photonic chip. The lens array coupling element is mounted on a top surface of the photonic chip and on the side edge surface. The coupling element includes a lens array (102) that is configured to modify spot sizes of light traversing to or from the waveguide. The coupling element further includes an overhang (104) on a side of the coupling element that opposes the lens array and that abuts the top surface of the photonic chip. The overhang includes a vertical stop surface (1 12) that has a depth configured to horizontally align an edge of the waveguide with a focal length of the lens array and that vertically aligns focal points of the lens array with the edge of the waveguide.

    Abstract translation: 公开了一种光子集成电路装置。 该装置包括光子芯片（200）和透镜阵列耦合元件（100）。 光子芯片包括在光子芯片的侧边缘表面处的波导（202）。 透镜阵列耦合元件安装在光子芯片的顶表面上并在侧边缘表面上。 耦合元件包括透镜阵列（102），其被配置为修改横穿波导或从波导穿过的光的光斑尺寸。 耦合元件还包括在耦合元件的与透镜阵列相对并且邻接光子芯片的顶表面的一侧上的突出部（104）。 突出部分包括垂直止动表面（112），该垂直止动表面（112）具有配置成水平地对准波导的边缘与透镜阵列的焦距并使透镜阵列的焦点与波导的边缘垂直对准的深度。

    DUV LASER ANNEALING AND STABILIZATION OF SiCOH FILMS
    3.
    发明申请
    DUV LASER ANNEALING AND STABILIZATION OF SiCOH FILMS 审中-公开
    DUV激光退火和SiCOH膜的稳定性

    公开(公告)号：WO2006022856A3

    公开(公告)日：2007-01-11

    申请号：PCT/US2005009112

    申请日：2005-03-17

    Applicant: IBM ,  CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

    Inventor： CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

    IPC: H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

    CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

    Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

    Abstract translation: 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其在不影响（增加）SiCOH薄膜的介电常数的情况下实现。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

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