公开(公告)号：WO2004114348A1

公开(公告)日：2004-12-29

申请号：PCT/IB2004/001988

申请日：2004-06-15

Applicant: NANION ApS ,  VISCOR, Petr ,  JENSEN, Michael ,  ANDERSEN, Roy ,  KOLARIK, Vladimir ,  DELONG, Armin

Inventor： VISCOR, Petr ,  JENSEN, Michael ,  ANDERSEN, Roy ,  KOLARIK, Vladimir ,  DELONG, Armin

IPC: H01J1/312

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

Abstract: Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

Abstract translation: 金属 - 绝缘体 - 金属平面电子发射体（PEES）有潜力用于未来几代半导体器件的先进光刻技术。 然而，PEE的寿命有限，限制了其商业适用性。 据信，PEE的有限寿命受到来自阳极的金属离子的扩散的限制。 内扩散可以以多种不同的方式来抵消。 一种方法是将PEE冷却到低于室温的温度。 这降低了金属离子迁移率，因此金属离子不太可能扩散到绝缘体层中。 另一种方法是偶尔从用于产生电子束的极性反转PEE两端的电位。 这抵消了驱动从PEE阳极到PEE阴极的带正电荷的金属离子的电驱动力。

公开(公告)号：EP0672257B1

公开(公告)日：1998-02-04

申请号：EP94901781.8

申请日：1993-12-07

Applicant: VISCOR, Petr

Inventor： Viscor, Petr ,  Vedde, Jan

IPC: G01R31/26 ,  G01N27/02

CPC classification number: G01R31/2648 ,  Y10T29/49004

Abstract: PCT No. PCT/DK93/00410 Sec. 371 Date Sep. 1, 1995 Sec. 102(e) Date Sep. 1, 1995 PCT Filed Dec. 7, 1993 PCT Pub. No. WO94/14078 PCT Pub. Date Jun. 23, 1994The present invention relates to a method for determining characteristic electrical properties of semi-conducting materials wherein the time/frequency dependent electrical impedance or admittance of the material is measured. The invention also relates to an apparatus for carrying out the method. A number of bulb and surface parameters characterize the electrical properties of a given piece of material. These parameters include the dielectric constant epsilon of the material, the difference DELTA mu ch in the chemical potential of the bulk of a material and the chemical potential of its surface and/or metal electrode-material surface interface, the density of the majority and minority electrical mobile charge carriers N and Nmin, respectively, in the bulk of the material, the electrical mobility mu of the majority electrical mobile charges in the bulk of the material and the electrical mobility mu min of minority mobile charge carriers, the surface and bulk emission and capture rates E.R. and C.R., respectively, for mobile positive and negative charge carriers characterizing the effect of surface and bulk localized states within the band gap, when they are present, on the electrical transport.

公开(公告)号：EP1086480B1

公开(公告)日：2003-09-03

申请号：EP99926278.5

申请日：1999-06-11

Applicant: Viscor, Petr ,  Nielsen, Niels Ole ,  Delong, Armin ,  Kolarik, Vladimir

Inventor： Viscor, Petr ,  Nielsen, Niels Ole ,  Delong, Armin ,  Kolarik, Vladimir

IPC: H01J1/30 ,  H01L29/76

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2235/062

公开(公告)号：WO2004114348A8

公开(公告)日：2005-03-31

申请号：PCT/IB2004001988

申请日：2004-06-15

Applicant: NANION APS ,  VISCOR PETR ,  JENSEN MICHAEL ,  ANDERSEN ROY ,  KOLARIK VLADIMIR ,  DELONG ARMIN

Inventor： VISCOR PETR ,  JENSEN MICHAEL ,  ANDERSEN ROY ,  KOLARIK VLADIMIR ,  DELONG ARMIN

IPC: G11B9/10 ,  H01J1/312 ,  H01J7/24 ,  H01J37/06 ,  H01J37/317

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

Abstract: Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

Abstract translation: 金属 - 绝缘体 - 金属平面电子发射体（PEES）有潜力用于未来几代半导体器件的先进光刻技术。 然而，PEE的寿命有限，限制了其商业应用。 据信，PEE的有限寿命受到来自阳极的金属离子的扩散的限制。 内扩散可以以多种不同的方式进行反驳。 一种方法是将PEE冷却到低于室温的温度。 这降低了金属离子迁移率，因此金属离子不太可能扩散到绝缘体层中。 另一种方法是偶尔从用于产生电子束的极性反转PEE两端的电位。 这抵消了驱动从PEE阳极到PEE阴极的带正电荷的金属离子的电驱动力。

公开(公告)号：EP1086480A1

公开(公告)日：2001-03-28

申请号：EP99926278.5

申请日：1999-06-11

Applicant: Viscor, Petr ,  Nielsen, Niels Ole ,  Delong, Armin ,  Kolarik, Vladimir

Inventor： Viscor, Petr ,  Nielsen, Niels Ole ,  Delong, Armin ,  Kolarik, Vladimir

IPC: H01J1/30 ,  H01L29/76

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2235/062

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (∩ 1mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (∩ 100V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：EP0672257A1

公开(公告)日：1995-09-20

申请号：EP94901781.0

申请日：1993-12-07

Applicant: VISCOR, Petr ,  VEDDE, Jan

Inventor： VISCOR, Petr ,  VEDDE, Jan

IPC: G01R31

CPC classification number: G01R31/2648 ,  Y10T29/49004

Abstract: PCT No. PCT/DK93/00410 Sec. 371 Date Sep. 1, 1995 Sec. 102(e) Date Sep. 1, 1995 PCT Filed Dec. 7, 1993 PCT Pub. No. WO94/14078 PCT Pub. Date Jun. 23, 1994The present invention relates to a method for determining characteristic electrical properties of semi-conducting materials wherein the time/frequency dependent electrical impedance or admittance of the material is measured. The invention also relates to an apparatus for carrying out the method. A number of bulb and surface parameters characterize the electrical properties of a given piece of material. These parameters include the dielectric constant epsilon of the material, the difference DELTA mu ch in the chemical potential of the bulk of a material and the chemical potential of its surface and/or metal electrode-material surface interface, the density of the majority and minority electrical mobile charge carriers N and Nmin, respectively, in the bulk of the material, the electrical mobility mu of the majority electrical mobile charges in the bulk of the material and the electrical mobility mu min of minority mobile charge carriers, the surface and bulk emission and capture rates E.R. and C.R., respectively, for mobile positive and negative charge carriers characterizing the effect of surface and bulk localized states within the band gap, when they are present, on the electrical transport.

公开(公告)号：CA2332556A1

公开(公告)日：1999-12-16

申请号：CA2332556

申请日：1999-06-11

Applicant: VISCOR PETR ,  DELONG ARMIN ,  NIELSEN NIELS OLE ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  DELONG ARMIN ,  NIELSEN NIELS OLE ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transpo rt of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness ( 1mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field ( 100V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature , that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：SK18512000A3

公开(公告)日：2003-01-09

申请号：SK18512000

申请日：1999-06-11

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：HU0103631A2

公开(公告)日：2002-01-28

申请号：HU0103631

申请日：1999-06-11

Applicant: DELONG ARMIN ,  KOLARIK VLADIMIR ,  NIELSEN NIELS OLE ,  VISCOR PETR

Inventor： DELONG ARMIN

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：AU4358999A

公开(公告)日：1999-12-30

申请号：AU4358999

申请日：1999-06-11

Applicant: DELONG ARMIN ,  KOLARIK VLADIMIR ,  NIELSEN NIELS OLE ,  VISCOR PETR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.