公开(公告)号：KR101368972B1

公开(公告)日：2014-03-03

申请号：KR1020130040220

申请日：2013-04-12

Applicant: 국민대학교산학협력단

Inventor： 황준석 ,  안제엽 ,  서효준 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/78693

Abstract: A method for extracting state density in a band gap of an amorpous oxide semiconductor thin film transistor by using an optical differential ideality coefficient and a device thereof are provided. The method for extracting state density in a band gap of an amorpous oxide semiconductor thin film transistor includes a step of measuring a darkroom drain current from a darkroom according to a gate voltage and measuring a light reaction drain current according to the gate voltage by emitting light of a light source, a step of calculating a light reaction ideality coefficient and a darkroom ideality coefficient by using the light reaction drain current and the darkroom drain current, and a step of extracting the state density in the band gap of the thin film transistor based on the differentiation of the light reaction ideality coefficient and the darkroom ideality coefficient. The step of extracting the state density extracts genuine state density by de-embedding capacitance formed by free electrons. [Reference numerals] (AA) Start; (BB) End; (S310) Measure a darkroom drain current according to a gate voltage in a darkroom; (S320) Measure a light reaction drain current according to the gate voltage by emitting light of a light source; (S330) Calculate a darkroom ideality coefficient by using the darkroom drain current; (S340) Calculate a light reaction ideality coefficient by using the light reaction drain current; (S350) Calculate light reaction capacitance based on the differentiation of the light reaction ideality coefficient and the darkroom ideality coefficient; (S360) Extract state density from a band gap based on the light reaction capacitance

Abstract translation: 提供了一种通过使用光学差分理想系数提取氧化硅半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 用于提取氧化硅半导体薄膜晶体管的带隙中的状态密度的方法包括根据栅极电压测量来自暗室的暗室漏极电流并根据栅极电压通过发光测量反射漏极电流的步骤 的光源，通过使用光反应漏极电流和暗室漏极电流来计算光反应理想系数和暗室理想系数的步骤，以及提取薄膜晶体管的带隙中的状态密度的步骤 关于光反应理想系数和暗室理想系数的差异。 提取状态密度的步骤通过解嵌入由自由电子形成的电容来提取真实状态密度。 （附图标记）（AA）开始; （BB）结束; （S310）根据暗室中的栅极电压测量暗室漏极电流; （S320）通过发射光源来测量根据栅极电压的光反应漏极电流; （S330）使用暗室漏电流计算暗室理想系数; （S340）使用光反应漏极电流计算光反应理想系数; （S350）基于光反射理想系数和暗室理想系数的差异，计算光反应电容; （S360）基于光反应电容从带隙提取状态密度