公开(公告)号：KR101531667B1

公开(公告)日：2015-06-26

申请号：KR1020140066080

申请日：2014-05-30

Applicant: 국민대학교산학협력단

Inventor： 김동명 ,  김대환 ,  안제엽 ,  배학열 ,  최현준 ,  황준석

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L29/78672

Abstract: 본발명은다결정박막트랜지스터에서결정립계가존재하지않는경우의게이트-드레인, 게이트-소스의커패시턴스-전압특성과결정립계가존재하는경우의게이트-드레인, 게이트-소스의커패시턴스-전압특성의차를이용하여결정립계의위치에의존하는커패시턴스의변화()를추출하고최종적으로는결정립계의위치를계산을통해추출하는장치및 방법을제공하기위한것으로서, 결정립계가소자의채널내에존재하지않는경우의커패시턴스-전압특성및 결정립계가소자의채널내에존재하는경우의커패시턴스-전압특성을각각검출하는커패시턴스-전압특성검출모듈과, 상기커패시턴스-전압특성검출모듈에서검출된각각의커패시턴스-전압특성을서로비교하고그 결과의차를이용하여커패시턴스의변화()를추출하는커패시턴스변화추출부와, 상기커패시턴스변화추출부에서추출된커패시턴스의변화를이용하여소자의채널내 결정립계의위치를산출하는결정립경계위치산출부를포함하여구성되는데있다.

Abstract translation: 本发明是提供一种装置和方法，其通过使用栅极 - 漏极和栅极 - 源极的电容 - 电压特性的差异来提取取决于晶粒位置的电容的变化，当晶粒不是 存在于多晶硅薄膜晶体管中，并且当存在晶粒时使用栅极 - 漏极和栅极 - 源极的电容 - 电压特性的差异，并且最终通过计算提取晶粒的位置。 该装置包括：电容电压特性检测模块，用于当晶体存在于器件的沟道内时分别检测电容 - 电压特性;以及当晶粒不存在于器件的沟道中时的电容 - 电压特性; 电容变化提取单元，通过使用电容电压特性检测模块分别检测出的电容电压特性之差通过比较电容电压特性来提取电容的变化（C_gb.X_GB）; 以及晶界边界位置计算单元，通过使用由电容变化提取单元提取的电容的变化来计算器件的沟道内的晶粒的位置。

公开(公告)号：KR101427713B1

公开(公告)日：2014-08-07

申请号：KR1020130112514

申请日：2013-09-23

Applicant: 국민대학교산학협력단

Inventor： 김동명 ,  김대환 ,  최현준 ,  배학열 ,  황준석 ,  안제엽

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/78693

Abstract: A method for extracting intrinsic subgap density of states of an amorphous oxide semiconductor thin film transistor using a channel conduction factor, and a device thereof are disclosed. The method for extracting the intrinsic subgap density of states of the amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention comprises a step of measuring capacitance according to a gate voltage of the thin film transistor; a step of extracting a conduction factor of a channel according to the gate voltage using the measured capacitance; and a step of extracting intrinsic subgap density of states based on the conduction factor of the extracted channel. The step of extracting the intrinsic subgap density of states replaces a physical length between source and drain electrodes with a length of a variable of the conduction factor of the channel and extracts the intrinsic subgap density of states considering the conduction factor of the channel.

Abstract translation: 公开了一种使用沟道导通因数提取非晶氧化物半导体薄膜晶体管的本征子陷阱密度的方法及其装置。 根据本发明实施例的用于提取非晶氧化物半导体薄膜晶体管的本征子陷阱密度的方法包括根据薄膜晶体管的栅极电压测量电容的步骤; 使用测量的电容根据栅极电压提取沟道的导通因数的步骤; 以及基于提取的通道的导通因数来提取状态的内在子陷阱密度的步骤。 提取状态的固有子间隙密度的步骤取代了源极和漏极之间的物理长度，其长度为通道的导通因子的变量的长度，并且考虑通道的导通因数提取状态的内在子陷阱密度。

公开(公告)号：KR101344752B1

公开(公告)日：2013-12-24

申请号：KR1020130027986

申请日：2013-03-15

Applicant: 국민대학교산학협력단

Inventor： 최현준 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/78693

Abstract: A method for extracting the density of state within an intrinsic band gap of an amorphous oxide semiconductor thin film transistor and a device thereof are disclosed. The method for extracting the density of state within the intrinsic band gap of the amorphous oxide semiconductor thin film transistor comprises; a step of measuring darkroom capacitance according to gate voltage of a thin film transistor; a step of measuring light reaction capacitance of the thin film transistor by irradiating the thin film transistor with a light source of a predetermined wavelength; a step of calculating intrinsic capacitance of the thin film transistor based on the darkroom capacitance and the light reaction capacitance; and a step of extracting the density of state within the intrinsic band gap of the thin film transistor based on the calculated intrinsic capacitance. The step of calculating the intrinsic capacitance extracts the density of state within an independent intrinsic band gap to parasitic capacitance by calculating the intrinsic capacitance after de-embedding the parasitic capacitance of the thin film transistor at the darkroom capacitance and the light reaction capacitance. [Reference numerals] (AA) Start;(BB) End;(S310) Darkroom capacitance according to gate voltage is measured in a darkroom;(S320) Light reaction capacitance according to gate voltage is measured by irradiating a light source;(S330) Intrinsic capacitance is calcualted based on measured darkroom capacitance and light reaction capacitance;(S340) Density of state within a intrinsic band gap is extracted based on calculated intrinsic capacitance

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的固有带隙内的状态密度的方法及其装置。 提取非晶氧化物半导体薄膜晶体管的本征带隙内的状态密度的方法包括： 根据薄膜晶体管的栅极电压测量暗室电容的步骤; 通过用预定波长的光源照射薄膜晶体管来测量薄膜晶体管的光反应电容的步骤; 基于暗室电容和光反应电容计算薄膜晶体管的本征电容的步骤; 以及基于所计算的本征电容提取薄膜晶体管的本征带隙内的状态密度的步骤。 计算本征电容的步骤通过计算在薄膜晶体管的寄生电容在暗室电容和光反应电容中去嵌入之后计算固有电容，将独立的固有带隙内的状态密度提取到寄生电容。 （参考号）（AA）开始;（BB）结束;（S310）根据栅极电压的暗室电容在暗室中测量;（S320）通过照射光源测量根据栅极电压的光反应电容;（S330） 基于测量的暗室电容和光反应电容计算本征电容;（S340）根据计算出的本征电容提取本征带隙内的状态密度

公开(公告)号：KR101368972B1

公开(公告)日：2014-03-03

申请号：KR1020130040220

申请日：2013-04-12

Applicant: 국민대학교산학협력단

Inventor： 황준석 ,  안제엽 ,  서효준 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/78693

Abstract: A method for extracting state density in a band gap of an amorpous oxide semiconductor thin film transistor by using an optical differential ideality coefficient and a device thereof are provided. The method for extracting state density in a band gap of an amorpous oxide semiconductor thin film transistor includes a step of measuring a darkroom drain current from a darkroom according to a gate voltage and measuring a light reaction drain current according to the gate voltage by emitting light of a light source, a step of calculating a light reaction ideality coefficient and a darkroom ideality coefficient by using the light reaction drain current and the darkroom drain current, and a step of extracting the state density in the band gap of the thin film transistor based on the differentiation of the light reaction ideality coefficient and the darkroom ideality coefficient. The step of extracting the state density extracts genuine state density by de-embedding capacitance formed by free electrons. [Reference numerals] (AA) Start; (BB) End; (S310) Measure a darkroom drain current according to a gate voltage in a darkroom; (S320) Measure a light reaction drain current according to the gate voltage by emitting light of a light source; (S330) Calculate a darkroom ideality coefficient by using the darkroom drain current; (S340) Calculate a light reaction ideality coefficient by using the light reaction drain current; (S350) Calculate light reaction capacitance based on the differentiation of the light reaction ideality coefficient and the darkroom ideality coefficient; (S360) Extract state density from a band gap based on the light reaction capacitance

Abstract translation: 提供了一种通过使用光学差分理想系数提取氧化硅半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 用于提取氧化硅半导体薄膜晶体管的带隙中的状态密度的方法包括根据栅极电压测量来自暗室的暗室漏极电流并根据栅极电压通过发光测量反射漏极电流的步骤 的光源，通过使用光反应漏极电流和暗室漏极电流来计算光反应理想系数和暗室理想系数的步骤，以及提取薄膜晶体管的带隙中的状态密度的步骤 关于光反应理想系数和暗室理想系数的差异。 提取状态密度的步骤通过解嵌入由自由电子形成的电容来提取真实状态密度。 （附图标记）（AA）开始; （BB）结束; （S310）根据暗室中的栅极电压测量暗室漏极电流; （S320）通过发射光源来测量根据栅极电压的光反应漏极电流; （S330）使用暗室漏电流计算暗室理想系数; （S340）使用光反应漏极电流计算光反应理想系数; （S350）基于光反射理想系数和暗室理想系数的差异，计算光反应电容; （S360）基于光反应电容从带隙提取状态密度

公开(公告)号：KR101378112B1

公开(公告)日：2014-03-26

申请号：KR1020130020316

申请日：2013-02-26

Applicant: 국민대학교산학협력단

Inventor： 배민경 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/12 ,  H01L29/78693

Abstract: Disclosed is a method for extracting state density in a band gap of an amorphous oxide semiconductor thin film transistor and a device for the same. The method for extracting state density in a band gap of an amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention includes a step of measuring a drain current according to a gate voltage of the thin film transistor; a step of calculating an ideality factor according to the gate voltage by using the measured drain current; a step of differentiating the calculated ideality factor and obtaining a capacitance within a channel based on the differentiated ideality factor; and a step of extracting the state density within the band gap of the thin film transistor based on the obtained capacitance within the cannel. The step of calculating the ideality factor comprises: calculating the ideality factor based on the drain current which is less than or equal to a threshold voltage among the measured drain current so that the state density in the band gap can be extracted without a complex modification. The ideality factor is differentiated so that the accurate state density in the band gap, which is independent to the threshold voltage and is not influenced from heat, light, or temperature, can be extracted. [Reference numerals] (AA) START; (BB) END; (S310) Measuring drain current according to gate voltage; (S320) Calculating an ideal coefficient according to the gate voltage by using the measured drain current; (S330) Differentiating the calculated ideal coefficient; (S340) Obtaining capacitance in a channel based on the differentiated ideal coefficient; (S350) Extracting status density in a band gap based on the capacitance in the obtained channel

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 根据本发明实施例的用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法包括根据薄膜晶体管的栅极电压测量漏极电流的步骤; 通过使用测量的漏极电流来计算根据栅极电压的理想因子的步骤; 基于分解的理想因子，区分计算出的理想因子并获得信道内的电容的步骤; 以及基于所获得的所述容器内的电容提取所述薄膜晶体管的带隙内的状态密度的步骤。 计算理想因子的步骤包括：基于在测量的漏极电流中小于或等于阈值电压的漏极电流来计算理想因子，使得可以在不进行复杂修改的情况下提取带隙中的状态密度。 理想因素是有区别的，因此可以提取与阈值电压无关并且不受热，光或温度影响的带隙中的准确状态密度。 （附图标记）（AA）START; （BB）END; （S310）根据栅极电压测量漏极电流; （S320）使用测定的漏极电流，根据栅极电压计算理想系数; （S330）微分计算的理想系数; （S340）基于差分理想系数获得信道中的电容; （S350）基于获得的通道中的电容提取带隙中的状态密度

公开(公告)号：KR101344754B1

公开(公告)日：2013-12-24

申请号：KR1020130027999

申请日：2013-03-15

Applicant: 국민대학교산학협력단

Inventor： 배학열 ,  최현준 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/78693

Abstract: A method for extracting the density of state within an intrinsic band gap of an amorphous oxide semiconductor thin film transistor and a device thereof are disclosed. The method for extracting the density of state within the intrinsic band gap of the amorphous oxide semiconductor thin film transistor according to the present invention comprises; a step of measuring darkroom capacitance according to gate voltage of a thin film transistor; a step of measuring light reaction capacitance of the thin film transistor by irradiating the thin film transistor with a light source of a predetermined wavelength; a step of applying a first capacitance model and a second capacitance model to an area under flat-band voltage of the thin film transistor and an area over the flat-band voltage of the thin film transistor; and a step of extracting the density of state of an acceptor within the band gap and the density of state of a donor within the band gap based on the darkroom capacitance, the light reaction capacitance, and the applied first and second capacitance models. The present invention extracts the whole density of state within the band gap using experimental measurement data and rapidly simply extracts the whole density of state within the band gap by omitting a repetitive process and a complex calculation. [Reference numerals] (AA) START;(BB) END;(S210) Darkroom capacitance according to gate voltage is measured in a darkroom;(S220) Light reaction capacitance according to gate voltage is measured by irradiating a light source;(S230) Different capacitance model is applied to an area under or over flat voltage (V_FB);(S240) Density of state of a donor within a band gap and the density of state of anacceptor within the band gap are separately extracted based on measured darkroom capacitance, light reaction capacitance, and a capacitance model

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的固有带隙内的状态密度的方法及其装置。 根据本发明的提取非晶氧化物半导体薄膜晶体管的本征带隙内的状态密度的方法包括： 根据薄膜晶体管的栅极电压测量暗室电容的步骤; 通过用预定波长的光源照射薄膜晶体管来测量薄膜晶体管的光反应电容的步骤; 将第一电容模型和第二电容模型应用于薄膜晶体管的平带电压下的区域和薄膜晶体管的平坦带电压上的面积的步骤; 以及基于暗室电容，光反应电容和所施加的第一和第二电容模型，提取带隙内的受体的状态密度和施加体在带隙内的状态密度的步骤。 本发明使用实验测量数据提取带隙内的整体状态密度，并且通过省略重复处理和复杂计算，快速简单地提取带隙内的整体状态密度。 （参考号）（AA）START;（BB）END;（S210）根据栅极电压的暗室电容在暗室中测量;（S220）通过照射光源测量根据栅极电压的光反应电容;（S230） 不同的电容模型应用于平坦电压（V_FB）以下的区域;（S240）基于测量的暗室电容，单独提取在带隙内的供体的状态密度和带隙内的受体的状态密度， 光反应电容和电容模型

公开(公告)号：KR101375787B1

公开(公告)日：2014-03-18

申请号：KR1020130025094

申请日：2013-03-08

Applicant: 국민대학교산학협력단

Inventor： 전성우 ,  배학열 ,  홍의연 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/12 ,  H01L29/78693

Abstract: Disclosed are a method for extracting the state density in a band gap of an amorphous oxide semiconductor thin film transistor, and a device therefor. The method for extracting the state density in a band gap of an amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention comprises the steps of: measuring capacitance and conductance according to gate voltage relative to predetermined frequencies; calculating local capacitance formed by a local trap in a channel based on the measured capacitance and conductance; and extracting the state density in the band gap based on the calculated local capacitance. When the local capacitance is calculated, channel conductance formed at the channel is calculated using the measured capacitance and conductance. As the local capacitance is calculated based on the calculated channel conductance, entire state density in the band gap can be simply and rapidly extracted using only experimentally measured data without iteration procedures and complicated calculation. And local capacitance and free electrons capacitance can be separated quantitatively according to the gate voltage. [Reference numerals] (AA) Start; (BB) End; (S210) Measuring conductance and capacitance according to gate voltage relative to multiple frequencies; (S220) Calculating channel conductance formed at a channel by using the measured capacitance and conductance; (S230) Calculating local capacitance (C_loc) formed by a local trap in the channel based on the calculated channel conductance; (S240) Extracting state density in a band gap based on the calculated local capacitance

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 根据本发明实施例的用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法包括以下步骤：根据预定频率的栅极电压测量电容和电导; 基于测量的电容和电导计算由通道中的局部陷阱形成的局部电容; 并根据所计算的局部电容提取带隙中的状态密度。 当计算局部电容时，使用测量的电容和电导计算在通道处形成的沟道电导。 由于局部电容是根据计算出的通道电导计算的，所以可以使用实验测量数据，无需迭代程序和复杂的计算，即可简单快速地提取带隙中的整体状态密度。 局部电容和自由电子电容可根据栅极电压定量分离。 （附图标记）（AA）开始; （BB）结束; （S210）根据多个频率的栅极电压测量电导率和电容值; （S220）通过使用测量的电容和电导计算在通道处形成的通道电导; （S230）基于所计算的通道电导计算由通道中的局部陷阱形成的局部电容（C_loc）; （S240）基于计算的局部电容提取带隙中的状态密度

公开(公告)号：KR101375784B1

公开(公告)日：2014-03-18

申请号：KR1020130025150

申请日：2013-03-08

Applicant: 국민대학교산학협력단

Inventor： 홍의연 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/7869

Abstract: A method for extracting state density inside a band gap of a metal oxide semiconductor field effect transistor using an optical differential body factor and a device thereof are disclosed. The method for extracting the state density inside a band gap of a metal oxide semiconductor field effect transistor according to an embodiment of the present invention includes the steps of: measuring the drain current of a darkroom according to the gate voltage of the metal oxide semiconductor field effect transistor in the darkroom and measuring optical response drain current according to the gate voltage of the metal oxide semiconductor field effect transistor by irradiating the light of a predetermined light source; calculating a darkroom body factor according to the gate voltage using the measured darkroom drain current and calculating an optical response body factor according to the gate voltage using the measured optical response drain current; and extracting the state density inside a band gap of a metal oxide semiconductor field effect transistor based on the calculated darkroom body factor and the optical response body factor. The state density in an independent band of a threshold voltage gap can be extracted without omitting a complicated measurement process and the state density inside the band gap can be simply and rapidly extracted. [Reference numerals] (AA) Start; (BB) End; (S410) Measuring darkroom drain current according to gate voltage in a darkroom; (S420) Measuring optical response drain current according to gate voltage by radiating the light of a light source; (S430) Calculating a darkroom body factor using the darkroom drain current; (S440) Calculating the optical response body factor using the optical response drain current; (S450) Extracting the state density in the band gap based on the differentiation of the darkroom body factor and the optical response body factor

Abstract translation: 公开了一种使用光学差分体因子及其装置提取金属氧化物半导体场效应晶体管的带隙内的状态密度的方法。 根据本发明实施例的用于提取金属氧化物半导体场效应晶体管的带隙内的状态密度的方法包括以下步骤：根据金属氧化物半导体场的栅极电压测量暗室的漏极电流 并且通过照射预定光源的光来测量根据金属氧化物半导体场效应晶体管的栅极电压的光响应漏极电流; 使用测量的暗室漏极电流根据栅极电压计算暗室体因子，并使用测量的光响应漏极电流根据栅极电压计算光响应体系因子; 并且基于计算出的暗室体因子和光响应体因子，提取金属氧化物半导体场效应晶体管的带隙内的状态密度。 可以提取阈值电压间隙的独立频带中的状态密度而不省略复杂的测量过程，并且可以简单且快速地提取带隙内的状态密度。 （附图标记）（AA）开始; （BB）结束; （S410）根据暗室中的栅极电压测量暗室漏极电流; （S420）通过照射光源来测量根据栅极电压的光学响应漏极电流; （S430）使用暗室漏极电流计算暗室体系因子; （S440）使用光学响应漏极电流计算光学响应体因子; （S450）基于暗房体因子和光学响应体因子的差异提取带隙中的状态密度

公开(公告)号：KR101126981B1

公开(公告)日：2012-03-26

申请号：KR1020110077904

申请日：2011-08-04

Applicant: 국민대학교산학협력단

Inventor： 배학열 ,  허인석 ,  김동명 ,  김대환

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L29/78663

Abstract: PURPOSE: A method for extracting a parasitic serial resistance element of an amorphous thin film transistor is provided to separate and extract various resistance elements by using structural parameters of a TFT, a current-voltage property, and a capacitance-voltage property. CONSTITUTION: A capacitance between a gate and a source of an amorphous thin film transistor and a capacitance between the gate and a drain thereof are measured(S210). A vertical resistance element is extracted among parasitic serial resistance elements(S220). Each contact resistant element and each bulk resistance element are separated and extracted(S230). A current between the drain and the source of the amorphous thin film transistor is measured(S240). A serial resistance value is extracted based on the current between the drain and the source(S250). A horizontal resistance element is extracted among the parasitic serial resistance element(S260). A transmission resistance element and a channel resistance element are separated and extracted from the horizontal resistance element(S270).

Abstract translation: 目的：提供一种用于提取非晶薄膜晶体管的寄生串联电阻元件的方法，通过使用TFT的结构参数，电流 - 电压特性和电容 - 电压特性来分离和提取各种电阻元件。 结构：测量非晶薄膜晶体管的栅极和源极之间的电容以及栅极和漏极之间的电容（S210）。 在寄生串联电阻元件中提取垂直电阻元件（S220）。 每个接触电阻元件和每个体电阻元件被分离和提取（S230）。 测量非晶薄膜晶体管的漏极和源极之间的电流（S240）。 基于漏极和源极之间的电流提取串联电阻值（S250）。 在寄生串联电阻元件中提取水平电阻元件（S260）。 从水平电阻元件分离并提取传输电阻元件和沟道电阻元件（S270）。