公开(公告)号：KR1020000074362A

公开(公告)日：2000-12-15

申请号：KR1019990018262

申请日：1999-05-20

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  최은석 ,  황준식 ,  박종봉

IPC: H01L27/00

Abstract: PURPOSE: An electrode structure for a semiconductor memory device is provided to be used as a lower electrode and a barrier layer for a stack of a dielectric layer and a polysilicon layer, by maintaining a stable interface state at a high temperature, and by controlling a formation of a silicide layer. CONSTITUTION: An electrode structure for a semiconductor memory device comprises a silicon-series material(21), a ruthenium layer(23) and a platinum layer(25). The silicon-series material is polysilicon, oxidation silicon or silicon. The ruthenium layer(Ru) is evaporated on the surface of the silicon-series material. The platinum layer(Pt) is evaporated on the surface of the ruthenium layer.

Abstract translation: 目的：提供一种用于半导体存储器件的电极结构，用于通过在高温下保持稳定的界面态而用作电介质层和多晶硅层的堆叠的下电极和阻挡层，并且通过控制 形成硅化物层。 构成：半导体存储器件的电极结构包括硅系材料（21），钌层（23）和铂层（25）。 硅系材料是多晶硅，氧化硅或硅。 在硅系材料的表面上蒸发钌层（Ru）。 铂层（Pt）在钌层的表面蒸发。

公开(公告)号：KR100319462B1

公开(公告)日：2002-01-12

申请号：KR1019990018264

申请日：1999-05-20

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  신웅철 ,  최규정 ,  양정환

IPC: H01L27/00

Abstract: 본발명은반도체기억소자구조와그 제조방법에관한것으로, 실리콘계열의기재의상측에트리테트라메틸헵타네디오나토이트륨(Tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)Yttrium(Ⅲ))과메틸사이크로펜타디에닐망간트리카보닐((CHCH)Mn(CO))을각각열분해한후 화학반응기안에서산소와함께반응시켜이트륨망간네이트(YMnO)층을형성한후, 상기이트륨망간네이트(YMnO)층을절연층으로사용하여이 상측에스트론튬비스무스탄탈레이트(SrBiTaO)층을물리적인증착방법으로형성하여이루어지는반도체기억소자구조및 그제조방법에관한것이다. 이러한구성에의하면, 치밀한미세구조를갖는박막을얻을수있으며고온에서안정한계면상태를유지하여실리콘의산화도억제되고각층의구성원소들의상호확산도거의일어나지않아이러한구조는탁월한신뢰성을가진반도체기억소자로서활용될수 있는데, 특히비휘발성강유전체전계효과기억소자로서뛰어난기능을가진다.

公开(公告)号：KR1020000074364A

公开(公告)日：2000-12-15

申请号：KR1019990018264

申请日：1999-05-20

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  신웅철 ,  최규정 ,  양정환

IPC: H01L27/00

Abstract: PURPOSE: A semiconductor memory device structure is provided to be used in a non-volatile ferroelectric field effect transistor(FET) memory device, by maintaining a stable interface characteristic and a good diffusion blocking characteristic after a high temperature process. CONSTITUTION: A semiconductor memory device structure comprises a silicon-series material, an yttrium manganate (YMnO3) layer, a strontium bismuth tantalate(SrBi2Ta2O9) layer. The yttrium manganate layer is evaporated on the surface of the silicon-series material. The strontium bismuth tantalate layer is evaporated on the yttrium manganate layer. And the semiconductor memory device structure further comprises a platinum layer evaporated on the SrBi2Ta2O9 layer.

Abstract translation: 目的：通过在高温处理后保持稳定的界面特性和良好的扩散阻挡特性，提供了用于非挥发性铁电场效应晶体管（FET）存储器件的半导体存储器件结构。 构成：半导体存储器件结构包括硅系材料，锰酸钇（YMnO3）层，钽酸钡锶钡（SrBi2Ta2O9）层。 在硅系材料的表面上蒸发锰酸钇层。 钽酸锶钽酸盐层在锰酸钇层上蒸发。 并且半导体存储器件结构还包括在SrBi2Ta2O9层上蒸发的铂层。

公开(公告)号：KR100367237B1

公开(公告)日：2003-01-10

申请号：KR1019990018262

申请日：1999-05-20

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  최은석 ,  황준식 ,  박종봉

IPC: H01L27/00

Abstract: PURPOSE: An electrode structure for a semiconductor memory device is provided to be used as a lower electrode and a barrier layer for a stack of a dielectric layer and a polysilicon layer, by maintaining a stable interface state at a high temperature, and by controlling a formation of a silicide layer. CONSTITUTION: An electrode structure for a semiconductor memory device comprises a silicon-series material(21), a ruthenium layer(23) and a platinum layer(25). The silicon-series material is polysilicon, oxidation silicon or silicon. The ruthenium layer(Ru) is evaporated on the surface of the silicon-series material. The platinum layer(Pt) is evaporated on the surface of the ruthenium layer.

Abstract translation: 目的：提供一种用于半导体存储器件的电极结构，通过在高温下保持稳定的界面状态，并且通过控制一个半导体存储器件的电极结构来用作电介质层和多晶硅层的叠层的下电极和势垒层 形成硅化物层。 构成：用于半导体存储器件的电极结构包括硅系列材料（21），钌层（23）和铂层（25）。 硅系材料是多晶硅，氧化硅或硅。 钌层（Ru）在硅系材料的表面蒸发。 铂层（Pt）在钌层的表面上蒸发。

公开(公告)号：KR100306387B1

公开(公告)日：2001-09-26

申请号：KR1019990006667

申请日：1999-02-27

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  신웅철 ,  최은석 ,  황준식

IPC: H01L29/40

Abstract: 본발명은반도체기억소자용전극구조및 그제조방법에관한것으로서, 실리콘계열(폴리실리콘, 산화실리콘, 실리콘)의기재의상측에루테늄카보닐(Ru(CO))을열분해에의해증착하여루테늄(Ru)층을형성한다음, 상기루테늄(Ru)층의상측에루테늄카보닐(Ru(CO))을산소와함께반응시켜증착하여산화루테늄(RuO)층을형성한후, 상기산화루테늄(RuO)층의상측에메틸사이클로펜타디에닐트리메틸백금( (CH)(CHCH)Pt )을산소와함께반응시켜증착하여백금(Pt)층을형성하여이루어지는반도체기어소자용전극구조및 그제조방법에관한것이다. 이러한구성에의하면, 넓은면적의증착과치밀한미세구조를갖는박막을얻을수 있으며, 고온에서안정한계면상태를유지하며폴리실리콘의산화도억제되고구성원소들의상호확산도거의일어나지않아이 전극구조는유전체와폴리실리콘과의적층을위한하부전극및 장벽층으로활용할수 있다.

公开(公告)号：KR1020000056909A

公开(公告)日：2000-09-15

申请号：KR1019990006667

申请日：1999-02-27

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  신웅철 ,  최은석 ,  황준식

IPC: H01L29/40

Abstract: PURPOSE: A method for manufacturing an electrode structure for a semiconductor memory device is provided to be used as a storage electrode and a barrier layer for a stack of a dielectric and a polysilicon, by maintaining a stable boundary in a high temperature, by controlling an oxidation of a polysilicon, and by preventing a mutual diffusion between composed chemical elements. CONSTITUTION: A method for manufacturing an electrode structure for a semiconductor memory device, comprises the steps of: evaporating Ru3(CO)12 by a pyrolysis on silicon-containing material, to form a Ru layer; evaporating by having the Ru3(CO)12 react with an oxygen on the Ru layer, to form a RuO2 layer; and evaporating by having a (CH3)3(CH3C5H4)Pt react with an oxygen on the RuO2 layer, to form a Pt layer.

Abstract translation: 目的：制造用于半导体存储器件的电极结构的制造方法，通过控制高温下的稳定边界，将其用作电介质和多晶硅的堆叠的保持电极和阻挡层 多晶硅的氧化，以及防止组成的化学元素之间的相互扩散。 构成：制造半导体存储器件的电极结构的方法，包括以下步骤：通过在含硅材料上的热解使Ru 3（CO）12蒸发，形成Ru层; 通过使Ru 3（CO）12与Ru层上的氧反应形成RuO 2层而蒸发; 并通过使（CH3）3（CH3C5H4）Pt与RuO 2层上的氧反应而蒸发，形成Pt层。