公开(公告)号：KR100367237B1

公开(公告)日：2003-01-10

申请号：KR1019990018262

申请日：1999-05-20

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  최은석 ,  황준식 ,  박종봉

IPC: H01L27/00

Abstract: PURPOSE: An electrode structure for a semiconductor memory device is provided to be used as a lower electrode and a barrier layer for a stack of a dielectric layer and a polysilicon layer, by maintaining a stable interface state at a high temperature, and by controlling a formation of a silicide layer. CONSTITUTION: An electrode structure for a semiconductor memory device comprises a silicon-series material(21), a ruthenium layer(23) and a platinum layer(25). The silicon-series material is polysilicon, oxidation silicon or silicon. The ruthenium layer(Ru) is evaporated on the surface of the silicon-series material. The platinum layer(Pt) is evaporated on the surface of the ruthenium layer.

Abstract translation: 目的：提供一种用于半导体存储器件的电极结构，通过在高温下保持稳定的界面状态，并且通过控制一个半导体存储器件的电极结构来用作电介质层和多晶硅层的叠层的下电极和势垒层 形成硅化物层。 构成：用于半导体存储器件的电极结构包括硅系列材料（21），钌层（23）和铂层（25）。 硅系材料是多晶硅，氧化硅或硅。 钌层（Ru）在硅系材料的表面蒸发。 铂层（Pt）在钌层的表面上蒸发。

公开(公告)号：KR1020000074362A

公开(公告)日：2000-12-15

申请号：KR1019990018262

申请日：1999-05-20

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  최은석 ,  황준식 ,  박종봉

IPC: H01L27/00

Abstract: PURPOSE: An electrode structure for a semiconductor memory device is provided to be used as a lower electrode and a barrier layer for a stack of a dielectric layer and a polysilicon layer, by maintaining a stable interface state at a high temperature, and by controlling a formation of a silicide layer. CONSTITUTION: An electrode structure for a semiconductor memory device comprises a silicon-series material(21), a ruthenium layer(23) and a platinum layer(25). The silicon-series material is polysilicon, oxidation silicon or silicon. The ruthenium layer(Ru) is evaporated on the surface of the silicon-series material. The platinum layer(Pt) is evaporated on the surface of the ruthenium layer.

Abstract translation: 目的：提供一种用于半导体存储器件的电极结构，用于通过在高温下保持稳定的界面态而用作电介质层和多晶硅层的堆叠的下电极和阻挡层，并且通过控制 形成硅化物层。 构成：半导体存储器件的电极结构包括硅系材料（21），钌层（23）和铂层（25）。 硅系材料是多晶硅，氧化硅或硅。 在硅系材料的表面上蒸发钌层（Ru）。 铂层（Pt）在钌层的表面蒸发。