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    자성 나노 입자 배열, 이의 제조방법 및 이를 이용한 자기저장매체
    2.
    发明公开
    자성 나노 입자 배열, 이의 제조방법 및 이를 이용한 자기저장매체 失效
    磁性纳米灯，其制造方法及使用其的磁性存储介质

    公开(公告)号：KR1020100097556A

    公开(公告)日：2010-09-03

    申请号：KR1020090016552

    申请日：2009-02-26

    Applicant: 성균관대학교산학협력단

    Inventor： 김용태 ,  이우황 ,  김두식 ,  이현주 ,  권영욱

    IPC: B82B1/00 ,  B82B3/00 ,  B82Y10/00

    CPC classification number: B81C1/00031 ,  B81B2201/07 ,  B81B2207/056 ,  B82B3/00 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/855 ,  G11B5/858 ,  H01F1/0063 ,  H01F1/0081 ,  H01F1/009 ,  H01F41/34

    Abstract: PURPOSE: A magnetic nanoparticle array, a manufacturing method thereof, a magnetic storage medium using thereof, and a nanolaminate structure including thereof are provided to obtain a magnetic nanoparticle through an electro-deposition process using a mesoporous thin film. CONSTITUTION: A nanolaminate structure comprises a substrate(2), and a monocrystal magnetic nanoparticle array including a vertical magnetic anisotropy formed on the substrate. A manufacturing method of the nanolaminate structure comprises the following steps: forming a mesoporous thin film(1) on the substrate; electrodepositing a magnetic nanoparticle inside mesopores of the thin film; and etching the mesoporous thin film.

    Abstract translation: 目的：提供磁性纳米颗粒阵列，其制造方法，使用其的磁性存储介质和包括其的纳米级氨基酸结构，以通过使用介孔薄膜的电沉积方法获得磁性纳米颗粒。 构成：纳米材料结构包括基材（2）和包含在基材上形成的垂直磁各向异性的单晶磁性纳米颗粒阵列。 所述纳米材料结构的制造方法包括以下步骤：在所述基材上形成介孔性薄膜（1） 将磁性纳米颗粒电沉积在薄膜的介孔内; 并蚀刻介孔薄膜。

    저유전율, 고경도의 박막 나노적층구조물 및 이의 제조방법
    4.
    发明公开
    저유전율, 고경도의 박막 나노적층구조물 및 이의 제조방법 无效
    低K和高硬度的薄膜纳米多层结构及其制造方法

    公开(公告)号：KR1020090079537A

    公开(公告)日：2009-07-22

    申请号：KR1020080005595

    申请日：2008-01-18

    Applicant: 성균관대학교산학협력단

    Inventor： 권영욱 ,  이우황 ,  이현주 ,  이기림

    IPC: H01L27/13

    CPC classification number: H01L21/02126 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/316 ,  Y10T428/265

    Abstract: A thin film nano multilayered structure with low-k dielectric and high hardness is to provide nano multilayered structure pores, which represent an air layer between dense silica layers in order for the silica layers not to be exposed to the outside. A method for fabricating a thin film nano multilayered structure with low-k dielectric and high hardness comprises: a first step of stirring a silica sol solution containing surfactant, silica precursor, solvent and catalyst at the temperature of 20 ~ 30°C in order to induce a self-assembly structure of silica and surfactant; a second step of spin-coating a silicon wafer with the silica sol solution; a third step of aging the silicon wafer in an oven of 50 ~ 100°C for 10 ~ 60 hours; and a fourth step of sintering the silicon wafer at 400°C ~ 500°C for 2 ~ 6 hours and cooling it off.

    Abstract translation: 具有低k电介质和高硬度的薄膜纳米多层结构是提供纳米多层结构孔，其表示致密二氧化硅层之间的空气层，以使二氧化硅层不暴露于外部。 制备低k电介质和高硬度的薄膜纳米多层结构的方法包括：在20〜30℃的温度下搅拌含有表面活性剂，二氧化硅前体，溶剂和催化剂的二氧化硅溶胶溶液的第一步骤，以便 诱导二氧化硅和表面活性剂的自组装结构; 用硅溶胶溶液旋涂硅晶片的第二步骤; 在50〜100℃的烘箱中将硅晶片老化10〜60小时的第三步骤; 以及在400℃〜500℃下烧结硅晶片2〜6小时并冷却的第四步骤。

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