Abstract:
A plate-shaped covering structure for a sensor system of a field effective transistor type and the sensor system having the same are provided to increase the reliability of an output signal by applying an electrically stable gate reference voltage to a biosensor. A metal electrode(104) serving as a reference electrode(203) is formed on an upper substrate(201), and the supper substrate is supported by a support member(202). The upper substrate is integrally formed with the support member. The metal electrode is formed in a chamber, a fluid passage, and/or a desired sidewall of a plate-shaped covering structure. The metal electrode is electrically connected to a semiconductor circuit board pad by a conductive paste or conductive material.
Abstract:
A trifluoroacetophenone derivative is provided to allow stable immobilization of carbonate ions to a solid substrate, to enable selective detection and measurement of carbonate ions through a surface plasma resonance process, and to solve the problems caused by ion selective membranes used in a conventional electrochemical process. A trifluoroacetophenone derivative is represented by the following formula 1 or 2. In formula 1, R is an ester group; each of X5-X8 independently represents H, halo, hydroxy, C1-C6 alkyl group or C1-C6 alkoxy group; and n is an integer of 1-24. The trifluoroacetophenone derivative is surface coated on a solid substrate for measuring carbonate ions. The solid substrate coated with the trifluoroacetophenone derivative is contacted with a liquid sample, the substrate is irradiated with light, and then the light reflectance is measured to detect or measure carbonate ions.
Abstract:
A highly sensitive field effect transistor type bio sensor is provided to increase driving current and physical contacting area with a bio sensing target material, and enhance electric capacity of the device by structurally modifying the shape of a semiconductor substrate, and improve sensing reproducibility and accuracy of the bio sensor by increasing S/N ratio(signal to noise ratio) of the bio sensor. A highly sensitive field effect transistor type bio sensor comprises: a gate insulating membrane(203) deposited on a semiconductor substrate; a gate electrode(204) formed on the gate insulating membrane; a source region(201) and a drain region(202) formed in both sides of the gate insulating membrane; and a bio sensing membrane formed on the gate electrode, wherein a reference electrode is formed on the gate electrode and the semiconductor substrate has at least one predetermined prominence and depression part. The prominence and depression part is prepared by coating a polymer thin film with resist materials, performing an imprinting process on the resist with a micro stamp, repeating the imprinting process to form the pattern on the total substrate, removing a residual layer from the resist, and forming a predetermined shape on the semiconductor substrate with the resist pattern as a mask.