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公开(公告)号：KR1020070104091A
公开(公告)日：2007-10-25
申请号：KR1020060036248
申请日：2006-04-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: A method for forming III-nitride semiconductor layer and an apparatus using the same are provided to use single crystal SiO2 substrate instead of a conventional sapphire substrate and a silicon carbide substrate. A method for forming III-nitride semiconductor layer includes the steps of: a first step of forming a buffer layer(32) on a single crystal SiO2 substrate(31); and a second step of forming the III-nitride semiconductor layer(33) on the buffer layer. In at least one between the first and second steps, the single crystal SiO2 substrate serves a displacive phase transition. The single crystal SiO2 substrate is any one selected from a group consisting of an alpha quartz, a beta quartz, a low tridymite, a high tridymite, a low cristobalite, a high cristobalite or the like.
Abstract translation: 提供了用于形成III族氮化物半导体层的方法及其使用方法，以使用单晶SiO 2衬底代替常规蓝宝石衬底和碳化硅衬底。 一种形成III族氮化物半导体层的方法包括以下步骤：在单晶SiO 2衬底（31）上形成缓冲层（32）的第一步骤; 以及在缓冲层上形成III族氮化物半导体层（33）的第二步骤。 在第一和第二步骤中的至少一个中，单晶SiO 2衬底用于置换相变。 单晶SiO 2衬底是从由α石英，β石英，低鳞石英，高鳞石英，低方英石，高方英石等组成的组中选择的任意一种。
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公开(公告)号：KR100738373B1
公开(公告)日：2007-07-12
申请号：KR1020060001071
申请日：2006-01-04
Applicant: 재단법인서울대학교산학협력재단
Abstract: 2축 배향성을 갖는 금속 선재를 제조하기 위한 시스템 및 방법을 제공한다. 이 방법은 빌렛을 제조한 후, 압연 공정을 이용하여 상기 빌렛으로부터 금속 테이프를 제조하는 단계를 포함한다. 이후, 환원 분위기에서 상기 금속 테이프를 재결정화한다. 이때, 금속 테이프를 재결정화하는 단계는 금속 테이프에 소정의 자기장을 인가하는 단계를 포함한다.
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公开(公告)号：KR1020070073315A
公开(公告)日：2007-07-10
申请号：KR1020060001071
申请日：2006-01-04
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: C21D1/00 , B21B2001/022 , C21D1/74 , C21D2201/04 , C22F1/10
Abstract: A system and a method for manufacturing a superconductor wire which can improve structure degree of texture with biaxial-alignment property, and a system and a method for manufacturing a superconductor wire having excellent crystal arrangement characteristics at low cost are provided. A method for manufacturing a metal wire comprises: a step of manufacturing a billet; a step of manufacturing a metal tape from the billet using a rolling process; and a step(S4) of recrystallizing the metal tape in a reductive atmosphere, wherein the metal tape recrystallizing step comprises a step of applying a predetermined magnetic field to the metal tape. The metal tape recrystallizing step comprises the step of performing one cycle of heat treatment process multiple times, wherein the one cycle of heat treatment process comprises: a step(S41) of applying a predetermined magnetic field to the metal tape at the Curie temperature or less; a step(S42) of applying a predetermined magnetic field to the metal tape while heating the metal tape to the Curie temperature or more; and a step(S43) of applying a predetermined magnetic field to the metal tape while rapidly cooling the metal tape to the Curie temperature or less.
Abstract translation: 提供了一种可以提高双轴取向特性的结构质地的超导体线的制造方法和制造具有优异的晶体排列特性的超导线的系统和方法。 金属丝的制造方法包括：制造坯料的工序; 使用轧制方法从坯料制造金属带的步骤; 以及在还原气氛中使金属带再结晶的步骤（S4），其中金属带再结晶步骤包括向金属带施加预定磁场的步骤。 金属带再结晶步骤包括多次执行一个循环的热处理工艺的步骤，其中热处理工艺的一个循环包括：步骤（S41），以居里温度或更低的温度向金属带施加预定的磁场 ; 在将金属带加热到居里温度以上的同时向金属带施加预定磁场的步骤（S42）; 以及在将金属带快速冷却至居里温度以下的同时向金属带施加预定磁场的步骤（S43）。
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