公开(公告)号：KR1020080028292A

公开(公告)日：2008-03-31

申请号：KR1020070095962

申请日：2007-09-20

Applicant: 재단법인서울대학교산학협력재단

Inventor： 전헌수 ,  이재숭 ,  이준희

IPC: H01L33/20

CPC classification number: H01L33/20 ,  H01L33/32 ,  H01L33/44

Abstract: An III-nitride based light emitting diode structure and a manufacturing method thereof are provided to improve surface extraction efficiency by 2 times by forming monolithically integrated sidewall defectors through a conventional manufacturing process of LED. An LED structure has a Hi-nitride epi layer formed on a support substrate, in which angled mesa deflector is formed in a sidewall of the III-nitride epi layer and sidewall angle is between 20 degrees and 40 degrees. The support substrate is made of any one selected from the group consisting of sapphire, Si, SiC, MgAl2O4, ZnO, and MgO. The epi layer is made of any one selected from the group consisting of GaN, GaP, and GaAs. The epi layer has the structure that p-electrode is formed at the upper side of n- electrode, and the total thickness of the III-nitride thin film including the n-electrode and the p-electrode is in the range of 1 to 10 micrometers.

Abstract translation: 提供了一种III族氮化物基发光二极管结构及其制造方法，其通过LED的常规制造工艺形成单片集成的侧壁去除器来提高表面提取效率2倍。 LED结构具有形成在支撑基板上的高氮化物外延层，其中成角度的台面偏转器形成在III族氮化物外延层的侧壁中，并且侧壁角度在20度和40度之间。 支撑基板由选自由蓝宝石，Si，SiC，MgAl2O4，ZnO和MgO组成的组中的任一种制成。 外延层由选自GaN，GaP和GaAs中的任一种构成。 外延层具有在n电极的上侧形成p电极的结构，并且包括n电极和p电极的III族氮化物薄膜的总厚度在1〜10的范围内 微米。