公开(公告)号：KR100884935B1

公开(公告)日：2009-02-23

申请号：KR1020070108854

申请日：2007-10-29

Applicant: 재단법인서울대학교산학협력재단 ,  한국해양연구원

Inventor： 신규순 ,  이준희 ,  홍순규 ,  윤제용 ,  이종찬 ,  이홍금

IPC: G01N33/48

Abstract: A method of integratedly analyzing a microorganism is provided to analyze qualitatively and quantitively that any microorganism adheres to a surface area having any property by analyzing form of a bio-filter and entity distribution of microorganism about the bio-filter chip having the various surface properties. A method of integratedly analyzing a microorganism comprises steps of: (S10) preparing a bio-filter chip including a substrate of which a surface property changes according to a location in the substrate; (S20) exposing the bio-filter chip to environment that microorganisms exist; and (S30) analyzing the microorganisms on the bio-filter chip. The bio-filter chip includes the substrate of which One or more surface properties change one-dimensionally or multi-dimensionally.

Abstract translation: 提供了一种综合分析微生物的方法，以定性和定量的方式分析任何微生物通过分析生物过滤器的形式和具有各种表面性质的生物过滤芯片的微生物实体分布的形式粘附到具有任何性质的表面区域。 综合分析微生物的方法包括以下步骤：（S10）制备生物过滤芯片，其包括根据衬底中的位置而具有表面性质变化的衬底; （S20）将生物过滤芯片暴露于存在微生物的环境中; 和（S30）分析生物滤芯上的微生物。 生物过滤芯片包括其一个或多个表面性质一维或多维地改变的基底。

公开(公告)号：KR1020100041138A

公开(公告)日：2010-04-22

申请号：KR1020080100173

申请日：2008-10-13

Applicant: 재단법인서울대학교산학협력재단 ,  삼성전자주식회사

Inventor： 전헌수 ,  이준희

IPC: H01L33/22 ,  H01L33/16 ,  H01L33/32

Abstract: PURPOSE: A light emitting diode(LED) and a method for manufacturing the same are provided to obtain a blue LED structure with high light extracting efficiency by simultaneously inserting a micrometer size inclined sidewall deflector and nanometer size photonic crystals to a GaN-based LED device. CONSTITUTION: A photonic crystal is integrated on the upper side of a support substrate using a laser holography method and a dry-etching method. A GaN-based epi layer is formed on the upper side of the support substrate. An inclined reflector is formed on the sidewall of the GaN-based epi layer by an inductively coupled plasma-reactive ion etching method. The angle of the inclined reflector is in a range of 20 to 40°. A protective layer is formed on the upper side of the GaN-based epi layer by passing through a reflow.

Abstract translation: 目的：提供一种发光二极管（LED）及其制造方法，以通过将微米尺寸的倾斜侧壁偏转器和纳米尺寸光子晶体同时插入到GaN基LED器件中来获得具有高光提取效率的蓝色LED结构 。 构成：使用激光全息法和干蚀刻法将光子晶体集成在支撑基板的上侧。 在支撑基板的上侧形成GaN系外延层。 通过电感耦合等离子体反应离子蚀刻方法在GaN基外延层的侧壁上形成倾斜反射体。 倾斜反射镜的角度在20°〜40°的范围内。 通过回流在GaN基外延层的上侧形成保护层。

公开(公告)号：KR1020080028292A

公开(公告)日：2008-03-31

申请号：KR1020070095962

申请日：2007-09-20

Applicant: 재단법인서울대학교산학협력재단

Inventor： 전헌수 ,  이재숭 ,  이준희

IPC: H01L33/20

CPC classification number: H01L33/20 ,  H01L33/32 ,  H01L33/44

Abstract: An III-nitride based light emitting diode structure and a manufacturing method thereof are provided to improve surface extraction efficiency by 2 times by forming monolithically integrated sidewall defectors through a conventional manufacturing process of LED. An LED structure has a Hi-nitride epi layer formed on a support substrate, in which angled mesa deflector is formed in a sidewall of the III-nitride epi layer and sidewall angle is between 20 degrees and 40 degrees. The support substrate is made of any one selected from the group consisting of sapphire, Si, SiC, MgAl2O4, ZnO, and MgO. The epi layer is made of any one selected from the group consisting of GaN, GaP, and GaAs. The epi layer has the structure that p-electrode is formed at the upper side of n- electrode, and the total thickness of the III-nitride thin film including the n-electrode and the p-electrode is in the range of 1 to 10 micrometers.

Abstract translation: 提供了一种III族氮化物基发光二极管结构及其制造方法，其通过LED的常规制造工艺形成单片集成的侧壁去除器来提高表面提取效率2倍。 LED结构具有形成在支撑基板上的高氮化物外延层，其中成角度的台面偏转器形成在III族氮化物外延层的侧壁中，并且侧壁角度在20度和40度之间。 支撑基板由选自由蓝宝石，Si，SiC，MgAl2O4，ZnO和MgO组成的组中的任一种制成。 外延层由选自GaN，GaP和GaAs中的任一种构成。 外延层具有在n电极的上侧形成p电极的结构，并且包括n电极和p电极的III族氮化物薄膜的总厚度在1〜10的范围内 微米。