公开(公告)号：KR1020170111646A

公开(公告)日：2017-10-12

申请号：KR1020160037520

申请日：2016-03-29

Applicant: 전남대학교산학협력단

Inventor： 류상완 ,  문종하 ,  하준석 ,  허재영

IPC: G02B3/00 ,  B29D11/00 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306

CPC classification number: G02B3/0012 ,  B29D11/00009 ,  B29D11/00865 ,  G02B3/0037 ,  H01L21/02304 ,  H01L21/30604 ,  H01L21/3065

Abstract: 본발명은양면실리콘렌즈및 이의제조방법에대한것으로, 보다구체적으로는양면실리콘렌즈를전면패터닝공정만으로제조할수 있는방법에관한것이다. 본발명의양면실리콘렌즈의제조방법에의하면전면및 후면패터닝공정을모두수행하지않고전면패터닝공정만으로양면실리콘렌즈를제조할수 있는효과가있다. 또한, 본발명의양면실리콘렌즈의제조방법에의하면전면패터닝공정만을수행하므로각 면렌즈실리콘렌즈사이의정렬을높은정렬도로구현할수 있으며, 다양한형상의다양한곡률을갖는양면실리콘렌즈를제조할수 있는효과가있다.

Abstract translation: 本发明在硅​​透镜的两侧，及其生产方法，以能够更专门制造euroneun双面硅胶透镜只有前图案化步骤的方法。 根据本发明的双面硅透镜的生产过程中，不进行两者的正面和背面图案化步骤存在能够制造双面硅胶透镜只有前图案化步骤的效果。 此外，根据本发明的双面硅透镜的制造方法，因为它仅执行前图案化工艺，并且可以实现每个侧透镜硅透镜道高对准之间的对准，可以制造具有各种形状的不同曲率的双面硅油透镜效果 一。

公开(公告)号：KR1020100114493A

公开(公告)日：2010-10-25

申请号：KR1020100099900

申请日：2010-10-13

Applicant: 전남대학교산학협력단

Inventor： 류상완

IPC: H01L33/12 ,  H01L33/02 ,  H01L21/3063

CPC classification number: H01L33/0079 ,  H01L21/02458 ,  H01L21/67075 ,  H01L2933/0016

Abstract: PURPOSE: A method of separating a semiconductor device from a substrate is provided to manufacture a high power LED by growing an optical device including GaN series on a sapphire substrate. CONSTITUTION: In a method of separating a semiconductor device from a substrate(100), the semiconductor device includes a first semiconductor region(120) of n-GaN series and a second semiconductor region(240) of n-GaN. The semiconductor devices are arranged on the second substrate. Electrolytic etching is performed by using the first and second substrate as an anode and using an electrolyte as a cathode. The etch concentrations in the first and second semiconductor region are differently controlled and the second semiconductor region is removed, and then the semiconductor device is separated from the substrate.

Abstract translation: 目的：提供一种从衬底分离半导体器件的方法，以通过在蓝宝石衬底上生长包括GaN系列的光学器件来制造大功率LED。 构成：在将半导体器件与衬底（100）分离的方法中，半导体器件包括n-GaN系的第一半导体区域（120）和n-GaN的第二半导体区域（240）。 半导体器件布置在第二衬底上。 通过使用第一和第二衬底作为阳极并使用电解质作为阴极来进行电解蚀刻。 不同地控制第一和第二半导体区域中的蚀刻浓度，并且去除第二半导体区域，然后将半导体器件与衬底分离。

公开(公告)号：KR1020180107393A

公开(公告)日：2018-10-02

申请号：KR1020170034484

申请日：2017-03-20

Applicant: 전남대학교산학협력단

Inventor： 류상완 ,  강진호

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/3063 ,  H01L21/306

CPC classification number: H01L29/66462 ,  H01L21/30612 ,  H01L21/3063 ,  H01L29/7783

Abstract: 본발명은고성능저전력전계효과트랜지스터소자및 이의제조방법에관한것으로, 본발명이일실시예에따른고성능저전력전계효과트랜지스터소자의제조방법은준비된기판상에유전체를증착및 패터닝하여유전층을형성하는단계; 상기유전층의상부에 u-GaN, n-GaN 및 u-GaN이순차적으로증착된 GaN 구조층을형성하는단계; 상기 GaN 구조층을식각하여선택된칩 형상으로패터닝하는단계; 상기유전층을식각하여제거하는단계; 상기유전층의상부 u-GaN를식각하여 n-GaN를노출시키는단계; 상기 n-GaN를식각하여박막의 GaN층을형성하는단계; 및상기 GaN층에게이트유전체증착및 전극을형성하는단계를포함하는것을특징으로한다.

公开(公告)号：KR101823579B1

公开(公告)日：2018-01-30

申请号：KR1020160037520

申请日：2016-03-29

Applicant: 전남대학교산학협력단

Inventor： 류상완 ,  문종하 ,  하준석 ,  허재영

IPC: G02B3/00 ,  B29D11/00 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306

Abstract: 본발명은양면실리콘렌즈및 이의제조방법에대한것으로, 보다구체적으로는양면실리콘렌즈를전면패터닝공정만으로제조할수 있는방법에관한것이다. 본발명의양면실리콘렌즈의제조방법에의하면전면및 후면패터닝공정을모두수행하지않고전면패터닝공정만으로양면실리콘렌즈를제조할수 있는효과가있다. 또한, 본발명의양면실리콘렌즈의제조방법에의하면전면패터닝공정만을수행하므로각 면렌즈실리콘렌즈사이의정렬을높은정렬도로구현할수 있으며, 다양한형상의다양한곡률을갖는양면실리콘렌즈를제조할수 있는효과가있다.

公开(公告)号：KR101278063B1

公开(公告)日：2013-06-24

申请号：KR1020120011655

申请日：2012-02-06

Applicant: 전남대학교산학협력단

Inventor： 류상완 ,  강진호

IPC: H01L33/22 ,  H01L33/32

CPC classification number: H01L33/0079 ,  H01L21/76259 ,  H01L33/0075 ,  H01L33/32

Abstract: PURPOSE: A method for separating a semiconductor device using a nanoporous GaN is provided to easily separate a substrate by using a chemical lift off process. CONSTITUTION: A first n-type nitride layer(200) is formed on a substrate(100). A dielectric layer(300) is formed in the upper part of the first n-type nitride layer. A nanoporous structure is formed under the surface of the first n-type nitride layer. A second n-type nitride layer is regrown to form a second n-type nitride layer. A conducting type substrate is bonded to the second n-type nitride layer. [Reference numerals] (100) Substrate; (AA) Front drawing; (BB) Plane drawing

Abstract translation: 目的：提供使用纳米多孔GaN分离半导体器件的方法，以通过使用化学剥离工艺容易地分离衬底。 构成：在基板（100）上形成第一n型氮化物层（200）。 在第一n型氮化物层的上部形成介电层（300）。 在第一n型氮化物层的表面下形成纳米孔结构。 再生长第二n型氮化物层以形成第二n型氮化物层。 导电型基板与第二n型氮化物层接合。 （附图标记）（100）基板; （AA）正面图; （BB）平面图

公开(公告)号：KR100803053B1

公开(公告)日：2008-02-18

申请号：KR1020060098481

申请日：2006-10-10

Applicant: 전남대학교산학협력단

Inventor： 김진혁 ,  문종하 ,  류상완

IPC: H01L21/20 ,  B82Y40/00

CPC classification number: H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02658

Abstract: A method for fabricating a zinc oxide nanorod array having a periodic pattern is provided to fabricate an inexpensive zinc oxide nanorod array at a low temperature by using a hydrothermal synthesis method and an anodic aluminum nano pattern. An ultrasonic cleaning process can be performed on a substrate(110) wherein acetone, methanol, isopropyl alcohol and deionized water are sequentially used. A silicon oxide layer having a nano pattern is formed on a substrate by using an aluminum anodization process. The substrate is disposed in a solution for hydrothermal synthesis in which a zinc source is melted. A zinc oxide nanorod array(150) is formed on the substrate by performing a hydrothermal synthesis process on the solution for hydrothermal synthesis. The process for forming the silicon oxide layer having the nano pattern includes the following steps. A silicon oxide layer having the nano pattern is formed. An aluminum layer is deposited on the silicon oxide layer. An aluminum anodization process is performed on the aluminum layer to form an aluminum oxide layer made of a porous nano pattern. The silicon oxide layer is etched by using the porous nano pattern formed in the aluminum oxide layer. The aluminum oxide layer is removed.

Abstract translation: 提供一种制造具有周期性图案的氧化锌纳米棒阵列的方法，以通过使用水热合成法和阳极铝纳米图案在低温下制造便宜的氧化锌纳米棒阵列。 可以在依次使用丙酮，甲醇，异丙醇和去离子水的基材（110）上进行超声波清洗工艺。 通过使用铝阳极氧化处理，在基板上形成具有纳米图案的氧化硅层。 将基板置于水热合成溶液中，其中锌源熔化。 通过对水热合成溶液进行水热合成工艺，在基板上形成氧化锌纳米棒阵列（150）。 形成具有纳米图案的氧化硅层的工艺包括以下步骤。 形成具有纳米图案的氧化硅层。 铝层沉积在氧化硅层上。 在铝层上进行铝阳极氧化处理以形成由多孔纳米图案制成的氧化铝层。 通过使用在氧化铝层中形成的多孔纳米图案来蚀刻氧化硅层。 去除氧化铝层。

公开(公告)号：KR101984934B1

公开(公告)日：2019-09-03

申请号：KR1020120132379

申请日：2012-11-21

Applicant: 서울바이오시스 주식회사 ,  전남대학교산학협력단

Inventor： 허정훈 ,  최주원 ,  김창연 ,  김영욱 ,  류상완

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/12

公开(公告)号：KR101319218B1

公开(公告)日：2013-10-16

申请号：KR1020120044616

申请日：2012-04-27

Applicant: 전남대학교산학협력단

Inventor： 류상완

IPC: H01L33/22 ,  H01L33/12

CPC classification number: H01L33/0079 ,  H01L21/76259 ,  H01L33/16

Abstract: PURPOSE: A method for separating a substrate using a chemical etching method is provided to easily separate a substrate and a functional film by using a lift-off process. CONSTITUTION: An n-GaN based separation layer(300) is formed on a first substrate. A functional film (500) includes GaN. The functional film is formed on the separation layer. Nanovoids are formed within the separation layer. The functional film is bonded to a second substrate(700).

Abstract translation: 目的：提供使用化学蚀刻方法分离衬底的方法，以通过剥离工艺容易地分离衬底和功能膜。 构成：在第一衬底上形成n-GaN基隔离层（300）。 功能膜（500）包括GaN。 功能膜形成在分离层上。 在分离层内形成纳米级。 功能膜结合到第二基板（700）上。

公开(公告)号：KR1020080077788A

公开(公告)日：2008-08-26

申请号：KR1020070017434

申请日：2007-02-21

Applicant: 전남대학교산학협력단

Inventor： 류상완

IPC: H01S5/34

CPC classification number: H01S5/20 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/3077 ,  H01S5/3211 ,  H01S5/34306

Abstract: A semiconductor laser diode having a quantum well structure is provided to improve the temperature characteristic of a semiconductor laser diode by changing the energy band shape of an SCH(Separated Confinement Heterostructure) layer. A semiconductor laser diode having a quantum well structure includes a lower clad layer(300), a first SCH layer(400), an active layer(500), a second SCH layer(600), an upper clad layer(700), and a contact layer(800). The lower clad layer is formed on a substrate. The first SCH layer is formed on an upper part of the lower clad layer and has n-type and p-type doping areas on an upper part and a lower part of the first SCH layer. The active layer is formed on the upper part of the first SCH layer. The active layer having a multi-quantum well structure has a plurality of quantum well layers and a wall layer which are alternatively formed. The second SCH layer is formed on an upper part of the active layer and has n-type and p-type doping areas on an upper part and a lower part of the second SCH layer. The upper clad layer is formed on the upper part of the second SCH layer. The contact layer is formed on an upper part of the upper clad layer. The n-type doping area is formed so as to be opposite to an area close to the active layer in the first and second SCH layers. The p-type doping area is formed on an area close to the clad layer in the first and second SCH layers.

Abstract translation: 提供具有量子阱结构的半导体激光二极管，通过改变SCH（分离限制异质结构）层的能带形状来改善半导体激光二极管的温度特性。 具有量子阱结构的半导体激光二极管包括下包层（300），第一SCH层（400），有源层（500），第二SCH层（600），上覆层（700）和 接触层（800）。 下覆盖层形成在基板上。 第一SCH层形成在下包层的上部，并且在第一SCH层的上部和下部具有n型和p型掺杂区。 有源层形成在第一SCH层的上部。 具有多量子阱结构的有源层具有交替形成的多个量子阱层和壁层。 第二SCH层形成在有源层的上部，并且在第二SCH层的上部和下部具有n型和p型掺杂区。 上覆盖层形成在第二SCH层的上部。 接触层形成在上包层的上部。 n型掺杂区形成为与第一和第二SCH层中的有源层接近的区域相反。 p型掺杂区域形成在第一和第二SCH层中靠近包覆层的区域上。

公开(公告)号：KR100710428B1

公开(公告)日：2007-04-24

申请号：KR1020050074047

申请日：2005-08-12

Applicant: 전남대학교산학협력단

Inventor： 류상완

IPC: H01L21/8252 ,  H01L21/8254 ,  H01L21/22

Abstract: 본 발명은 확산물질층, 반도체 확산층 및 반도체 확산배리어층을 구비하는 화합물반도체 구조물에 관한 것으로, 반도체 확산배리어층은 반도체 확산층과 동일한 화합물 반도체 구성 물질을 포함하고 확산속도가 서로 다르게 구성되어 상기 확산물질층으로부터 확산되는 원소의 확산속도가 상기 반도체 확산배리어층에서 감소되도록 하는 화합물반도체 구조물을 제공한다.
확산배리어층, 확산물질층, 화합물반도체