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公开(公告)号：KR102224576B1
公开(公告)日：2021-03-08
申请号：KR1020180162972A
申请日：2018-12-17
Applicant: 전남대학교산학협력단
IPC: H01L31/0445 , H01L31/0224 , H01L31/032 , H01L31/18
CPC classification number: H01L31/0445 , H01L31/022441 , H01L31/022466 , H01L31/032 , H01L31/18 , Y02E10/50
Abstract: 본 발명은 무기 박막 태양전지에 관한 것으로 본 발명의 실시 예를 따르는 무기 박막 태양전지는, 기판; 상기 기판상에 배치된 후면전극; 상기 후면전극 상의 적어도 일부에 접하는 패턴을 갖도록 배치된 그래핀 산화물층; 상기 그래핀 산화물 층상에 배치된 광활성층; 및 상기 광활성 상에 배치된 상부전극;을 포함한다.
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公开(公告)号：KR102224576B1
公开(公告)日：2021-03-08
申请号：KR1020180162972
申请日：2018-12-17
Applicant: 전남대학교산학협력단
IPC: H01L31/0445 , H01L31/0224 , H01L31/032 , H01L31/18
Abstract: 본발명은무기박막태양전지에관한것으로본 발명의실시예를따르는무기박막태양전지는, 기판; 상기기판상에배치된후면전극; 상기후면전극상의적어도일부에접하는패턴을갖도록배치된그래핀산화물층; 상기그래핀산화물층상에배치된광활성층; 및상기광활성상에배치된상부전극;을포함한다.
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公开(公告)号：KR1020150032436A
公开(公告)日：2015-03-26
申请号：KR1020130112071
申请日：2013-09-17
Applicant: 전남대학교산학협력단
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/04
Abstract: SILAR법을 이용하여 CZTS 기반 광흡수 박막을 제조하는 방법이 개시된다. 이는 (a) 기판을 구리염, 아연염, 및 주석염을 포함하는 양이온 용액에 침지시키는 단계와, (b) 단계 (a)를 통과한 기판을 1차 세정하는 단계와, (c) 단계 (b)를 통과한 기판을 황염을 포함하는 음이온 용액에 침지시키는 단계와, (d) 단계 (d)를 통과한 기판을 2차 세정하는 단계를 포함한다. 이러한 싸이클을 소정 횟수 반복한 후, 건조와 열처리를 수행하여 CZTS 박막을 제조한다.
Abstract translation: 公开了使用SILAR法制造基于CZTS的光吸收薄膜的方法。 使用SILAR方法制造基于CZTS的光吸收薄膜的方法包括以下步骤：（a）将基板浸入包括铜盐，锌盐和锡盐的阳离子溶液中; （b）首先清洗在步骤（a）中处理的基材; （c）将步骤（b）中处理的基材浸入含硫盐的阴离子溶液中; 和（d）二次清洗步骤（c）中处理的基材。 通过干燥处理制造CZTS薄膜，并以预先设定的数量重复上述循环后的热处理。
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公开(公告)号：KR1020130126289A
公开(公告)日：2013-11-20
申请号：KR1020120050293
申请日：2012-05-11
Applicant: 전남대학교산학협력단
Abstract: A gas sensor and a method for manufacturing the gas sensor are provided. The gas sensor according to the present invention is able to rapidly detect detection target gas stably in terms of chemistry by employing a p-type thin film compound semiconductor layer, to cause the chemical reaction of the gas molecules on a p-n bonding interface by using accurate characteristics of the p-type thin film compound semiconductor layer and the porosity of a porous compound semiconductor layer, and to reduce the reaction and hour time. Also, the method for manufacturing the gas sensor is able to sputter and deposit a precursor thin film for a p-type compound semiconductor on a substrate, to form a p-type thin film compound semiconductor layer through a step for heat-treating the precursor thin film, and to manufacture a gas sensor that easily and simply gets excellent characteristics by forming an n-type porous compound semiconductor layer on the p-type thin film compound semiconductor layer through a step for growing an n-type metal oxide nanorod using a chemical bath deposition (CBD).
Abstract translation: 提供气体传感器和制造气体传感器的方法。 根据本发明的气体传感器能够通过使用p型薄膜化合物半导体层，在化学上稳定地快速检测检测目标气体，通过使用精确的方式使气体分子在pn键合界面上发生化学反应 p型薄膜化合物半导体层的特性和多孔化合物半导体层的孔隙率，并且减少反应和时间。 此外，制造气体传感器的方法能够在衬底上溅射沉积p型化合物半导体的前体薄膜，通过用于热处理前体的步骤形成p型薄膜化合物半导体层 并且通过在p型薄膜化合物半导体层上形成n型多孔化合物半导体层，通过用于生长n型金属氧化物纳米棒的步骤，制造气体传感器，其容易且简单地获得优异的特性， 化学浴沉积（CBD）。
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公开(公告)号：KR1020120113604A
公开(公告)日：2012-10-15
申请号：KR1020110031389
申请日：2011-04-05
Applicant: 전남대학교산학협력단
Abstract: PURPOSE: A manufacturing method of zinc oxide thin film using group III salt and oxidation zinc thin film manufactured by the same are provided to manufacture oxidized zinc thin film having a plurality of nano-rods with high aspect ratio. CONSTITUTION: A manufacturing method of zinc oxide thin film using group III salt comprises the following steps: providing a solution for zinc oxide hydrothermal synthesis including the group III salt; placing a substrate(10) in the solution for zinc oxide hydrothermal synthesis; and growing the oxidation zinc thin film(30) by heating the solution for zinc oxide hydrothermal synthesis. The oxidized zinc thin film includes a plurality of nano-rods grown up in the upper direction of the substrate. The nano-rods have the aspect ratio of 5-20. The group III salt which is included in the solution for zinc oxide hydrothermal synthesis includes one or more of Al, Ga and In.
Abstract translation: 目的：提供使用其制造的III族盐和氧化锌薄膜的氧化锌薄膜的制造方法，以制造具有高纵横比的多个纳米棒的氧化锌薄膜。 构成：使用III族盐的氧化锌薄膜的制造方法包括以下步骤：提供包括III族盐的氧化锌水热合成溶液; 将基底（10）放置在氧化锌水热合成溶液中; 并通过加热氧化锌水热合成溶液来生长氧化锌薄膜（30）。 氧化锌薄膜包括在基板的上方生长的多个纳米棒。 纳米棒的长宽比为5-20。 包含在氧化锌水热合成溶液中的III族盐包括Al，Ga和In中的一种或多种。
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Patent Agency Ranking
公开(公告)号：KR101093663B1
公开(公告)日：2011-12-15
申请号：KR1020100005652
申请日：2010-01-21
Applicant: 전남대학교산학협력단
IPC: H01L31/0445
CPC classification number: Y02E10/50
Abstract: 본 발명은 태양전지용 광 흡수층으로 활용될 수 있는 CZTS 박막의 합성 방법에 관한 것으로, 보다 구체적으로는 단일공정의 전기증착법을 통해 CZTS 전구체를 준비하는 단계; 및 상기 CZTS 전구체를 열처리하여 CZTS 박막을 형성하는 단계;를 포함하며, 상기 CZTS 전구체를 준비하는 단계:는 기판을 준비하는 제1단계; 일정 농도의 CuSO
4, ZnSO
4 , SnSO
4 및 Na
2 S
2 O
3 로 이루어진 혼합 전해물이 구비된 전해조를 준비하는 제2단계; 및 상기 기판을 상기 전해조에 담근 후, 1회의 전기증착법을 통해 CZTS 전구체를 형성하는 제3단계;를 포함하는 것을 특징으로 한다.-
公开(公告)号：KR101562435B1
公开(公告)日：2015-10-22
申请号：KR1020130126536
申请日：2013-10-23
Applicant: 전남대학교산학협력단
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 양극산화플레이트를이용하여제조되는 3차원구조의광흡수층을포함하는태양전지제조방법이개시된다. 하부구조의후면전극층상에알루미늄을적층한후 양극산화를통해다수개의나노홀또는다수개의나노기둥을가지는템플릿을형성한다. 템플릿의다수개의나노홀또는다수개의나노기둥에 CZTS 전구체물질을충전시킨후 템플릿을제거하여전구체박막을형성한다. 전구체박막을황화또는셀렌화분위기에서열처리하여 3차원구조의광흡수층을형성한다. 나아가, 열처리를수행하기전에양극산화중에후면전극층상에형성된산화물을제거한후 상술한열처리를수행할수 있다.
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公开(公告)号：KR101404289B1
公开(公告)日：2014-06-13
申请号：KR1020120142968
申请日：2012-12-10
Applicant: 전남대학교산학협력단
IPC: B82B3/00 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/042 , B82B3/00
Abstract: A method for manufacturing CZTS nanoparticles and CZTS nanoparticles manufactured by the same are provided. The method for manufacturing CZTS nanoparticles includes a step of preparing a precursor solution by mixing water-soluble salts containing Cu, Zn, Sn and S and water, and a step of synthesizing CZTS nanoparticles through the reaction of the precursor solution at a certain temperature. In the method, the CZTS nanoparticles may be manufactured without using a poisonous material and the method is eco-friendly. Since the CZTS nanoparticles may be manufactured by a hydrothermal synthesis using water as a solvent, the CZTS nanoparticles having high quality may be manufactured at low cost. Further, since the CZTS nanoparticles may be used as a replacing material of a common CIGS thin film solar cell, a solar cell having high efficiency may be realized at low cost.
Abstract translation: 提供了制造其制造CZTS纳米颗粒和CZTS纳米颗粒的方法。 制造CZTS纳米颗粒的方法包括通过混合含有Cu，Zn，Sn和S的水溶性盐和水来制备前体溶液的步骤，以及通过前体溶液在一定温度下的反应合成CZTS纳米颗粒的步骤。 在该方法中，可以在不使用有毒物质的情况下制造CZTS纳米颗粒，并且该方法是环保的。 由于可以通过使用水作为溶剂的水热合成制造CZTS纳米颗粒，所以可以以低成本制造具有高质量的CZTS纳米颗粒。 此外，由于CZTS纳米颗粒可以用作普通CIGS薄膜太阳能电池的替代材料，所以可以以低成本实现高效率的太阳能电池。
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9.发明授权ＣＺＴＳ나노입자 전구체 제조방법, 제조된 전구체, 전구체를 이용한 고품질 ＣＺＴＳ나노입자 제조방법 및 제조된 고품질 ＣＺＴＳ나노입자 有权生产CZTS纳米颗粒前体的方法，由其制备的前体，使用前体制备CZTS纳米颗粒的方法和由此制备的纳米颗粒
公开(公告)号：KR101099512B1
公开(公告)日：2011-12-27
申请号：KR1020100032248
申请日：2010-04-08
Applicant: 전남대학교산학협력단
Abstract: 본발명은 CZTS 나노입자(CuZnSnSnano-particle) 제조방법에관한것으로, 보다구체적으로는독성물질을사용하지않고 CuZnSnS나노입자전구체를합성하는제조방법, 그방법으로제조된전구체및 제조된전구체를황화열처리하여고품질 CuZnSnS나노입자를제조하는방법및 제조된고품질 CuZnSnS나노입자에관한것이다.
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公开(公告)号：KR1020110085721A
公开(公告)日：2011-07-27
申请号：KR1020100005652
申请日：2010-01-21
Applicant: 전남대학교산학협력단
IPC: H01L31/0445
CPC classification number: Y02E10/50 , H01L31/0445
Abstract: PURPOSE: A method for manufacturing a thin CZTS film by a single process electrodeposition method is provided to improve a thin CZTS film combining process which can be used for a solar battery by the single process electrodeposition method, thereby depositing a crystal film which has a large size. CONSTITUTION: A CZTS precursor is formed(S100). A substrate is prepared(S110). An electrolytic bath is for electrodeposition(S120). A CZTS precursor is formed by electrodeposition in the electrolytic bath(S130). A thin CZTS film is formed by heating the CZTS precursor(S200).
Abstract translation: 目的：提供一种通过单次电沉积方法制造薄CZTS薄膜的方法，以通过单次电沉积法改进可用于太阳能电池的薄CZTS薄膜组合工艺，从而沉积具有大的电沉积 尺寸。 构成：形成CZTS前体（S100）。 制备底物（S110）。 电解池用于电沉积（S120）。 通过在电解槽中电沉积形成CZTS前体（S130）。 通过加热CZTS前体（S200）形成薄的CZTS膜。
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