公开(公告)号：KR100368790B1

公开(公告)日：2003-01-24

申请号：KR1020010001650

申请日：2001-01-11

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: G02B6/293

Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.

Abstract translation: 目的：提供一种通过使用半导体激光器和半导体光学放大器的水平耦合来实现电光波长转换器的方法，以确保宽范围的输入功率，因为​​该方法不需要传统的Mach-Zender干涉仪结构， 利用诸如可变波长激光二极管的常规半导体激光器的特性。 本发明涉及一种通过使用半导体激光器和半导体光学放大器的水平耦合来实现电光波长转换器的方法，包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） ，防反射涂覆端部（100a，100b）并且通过劈开分割第一和第二波导（100,200），从而分别获得分开的反射表面和分开的防反射表面。 其上提供有用于该方法中的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构建成多量子阱结构。

公开(公告)号：KR1020020069729A

公开(公告)日：2002-09-05

申请号：KR1020010010094

申请日：2001-02-27

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: H01S3/136

Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.

Abstract translation: 目的：提供水平耦合型激光二极管，通过使用具有不同传播常数的两个有源元件来加宽可变波长范围。 构成：通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成水平耦合型激光二极管。 光放大器（200）具有与激光二极管（100）不同的传播常数。 为了向激光二极管（100）和光放大器（200）施加电流，第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部和下端部分 ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。

公开(公告)号：KR1020020060523A

公开(公告)日：2002-07-18

申请号：KR1020010001650

申请日：2001-01-11

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: G02B6/293

Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.

Abstract translation: 目的：提供一种通过使用半导体激光器的水平耦合和半导体光放大器来实现电光波长转换器的方法，以确保宽范围的输入功率，因为​​该方法不需要常规的马赫 - 泽德干涉仪结构，因此 利用诸如可变波长激光二极管的常规半导体激光器的特性。 构成：通过使用半导体激光器的水平耦合和半导体光学放大器来实现电光波长转换器的方法包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） （100a，100b）进行防反射，分割第一和第二波导管（100,200），分别得到分割的反射面和分割的防反射面。 在其上设置有在该方法中使用的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构成多量子阱结构。

公开(公告)号：KR100405940B1

公开(公告)日：2003-12-18

申请号：KR1020010010094

申请日：2001-02-27

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: H01S3/136

Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.

Abstract translation: 目的：提供水平耦合型激光二极管以通过使用具有不同传播常数的两个有源元件来扩大可变波长范围。 组成：水平耦合型激光二极管通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成。 光放大器（200）具有与激光二极管（100）不同的传播常数。 第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部分和下端部分中，以便将电流施加到激光二极管（100）和光放大器（200） ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。