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公开(公告)号：KR1020020049494A
公开(公告)日：2002-06-26
申请号：KR1020000078679
申请日：2000-12-19
Applicant: 한국과학기술연구원
IPC: G02B6/00
CPC classification number: H01S5/5036 , G02F1/3517 , G02F2/004 , G02F3/00
Abstract: PURPOSE: An all optical AND logic operation method of a Mach-Zehnder interferometer type all optical wavelength converter is provided, which realizes a ultra high speed logic operator having a compact size and a small input intensity using an XPM wavelength converter constituted with a semiconductor optical amplifier of Mach-Zehnder interferometer type. CONSTITUTION: The configuration of the method comprises a mode locked laser(100), and an attenuator(120) attenuating an optical output, and a multiplexer(MUX)(140), and the first optical delay line(160) delaying a speed of the optical output. A 3-dB optical fiber coupler(180) separates the optical intensity into a ratio of 50:50, and a polarization controller(200) controls a polarization state to obtain a maximum optical wavelength efficiency. The second optical delay line(220) delays the speed of the optical output, and an optical isolator(240) transmits the optical wavelength. The configuration also comprises an XPM wavelength converter(260), an erbium doped fiber amplifier(EDFA)(280), a wavelength filter(300) and a signal analyzer(320).
Abstract translation: 目的：提供马赫 - 曾德干涉仪全光学波长转换器的所有光学AND逻辑运算方法，实现了具有紧凑尺寸和小输入强度的超高速逻辑运算器，使用由半导体光学器件构成的XPM波长转换器 马赫 - 曾德干涉仪放大器。 方案：该方法的配置包括锁模激光器（100）和衰减光输出的衰减器（120）和多路复用器（MUX）（140），并且第一光延迟线（160）延迟 光输出。 3分贝光纤耦合器（180）将光强度分离成50:50的比例，并且偏振控制器（200）控制极化状态以获得最大的光波长效率。 第二光延迟线（220）延迟光输出的速度，并且光隔离器（240）传输光波长。 该配置还包括XPM波长转换器（260），掺铒光纤放大器（EDFA）（280），波长滤波器（300）和信号分析器（320）。
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公开(公告)号：KR100368790B1
公开(公告)日：2003-01-24
申请号：KR1020010001650
申请日：2001-01-11
Applicant: 한국과학기술연구원
IPC: G02B6/293
Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.
Abstract translation: 目的：提供一种通过使用半导体激光器和半导体光学放大器的水平耦合来实现电光波长转换器的方法，以确保宽范围的输入功率，因为该方法不需要传统的Mach-Zender干涉仪结构， 利用诸如可变波长激光二极管的常规半导体激光器的特性。 本发明涉及一种通过使用半导体激光器和半导体光学放大器的水平耦合来实现电光波长转换器的方法，包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） ，防反射涂覆端部（100a，100b）并且通过劈开分割第一和第二波导（100,200），从而分别获得分开的反射表面和分开的防反射表面。 其上提供有用于该方法中的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构建成多量子阱结构。
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公开(公告)号：KR1020020049493A
公开(公告)日：2002-06-26
申请号：KR1020000078678
申请日：2000-12-19
Applicant: 한국과학기술연구원
IPC: G02B26/02
CPC classification number: G02B5/1857 , G03H2260/14
Abstract: PURPOSE: A method for generating a large area holographic grating and an apparatus thereof are provided, which fabricates a large area grating below an effective area of a lens as using an optical system of small caliber. CONSTITUTION: A light projected by an ultraviolet ray laser(10) of a single wavelength is focused to a pin hole(14) with an object lens(12) and then passes through a spatial lens removing noise in the air, and then the beam extended using a collimating lens(16) and passes through an inverse Gaussian transparent filter(22) and is irradiated to a sample(18) in parallel. The sample is located to have an angle to a path of the light, and a mirror(20) is attached to the sample so that a reflected light has a specific angle with the incident light to control an interval of an interference pattern.
Abstract translation: 目的：提供一种用于生成大面积全息光栅的方法及其装置，其使用小口径光学系统在透镜的有效区域下方制造大面积的光栅。 构成：将由单一波长的紫外线激光器（10）投影的光聚焦到具有物镜（12）的针孔（14），然后通过空间透镜去除空气中的噪声，然后将光束 使用准直透镜（16）延伸并通过反相高斯透明滤光器（22）并且平行地照射到样品（18）。 样品被定位成与光的路径成一角度，并且反射镜（20）附着到样品上，使得反射光与入射光具有特定的角度，以控制干涉图案的间隔。
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公开(公告)号：KR1020020069729A
公开(公告)日：2002-09-05
申请号：KR1020010010094
申请日：2001-02-27
Applicant: 한국과학기술연구원
IPC: H01S3/136
Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.
Abstract translation: 目的：提供水平耦合型激光二极管，通过使用具有不同传播常数的两个有源元件来加宽可变波长范围。 构成：通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成水平耦合型激光二极管。 光放大器（200）具有与激光二极管（100）不同的传播常数。 为了向激光二极管（100）和光放大器（200）施加电流，第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部和下端部分 ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。
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公开(公告)号：KR1020020060523A
公开(公告)日：2002-07-18
申请号：KR1020010001650
申请日：2001-01-11
Applicant: 한국과학기술연구원
IPC: G02B6/293
Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.
Abstract translation: 目的：提供一种通过使用半导体激光器的水平耦合和半导体光放大器来实现电光波长转换器的方法，以确保宽范围的输入功率，因为该方法不需要常规的马赫 - 泽德干涉仪结构，因此 利用诸如可变波长激光二极管的常规半导体激光器的特性。 构成：通过使用半导体激光器的水平耦合和半导体光学放大器来实现电光波长转换器的方法包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） （100a，100b）进行防反射，分割第一和第二波导管（100,200），分别得到分割的反射面和分割的防反射面。 在其上设置有在该方法中使用的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构成多量子阱结构。
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Patent Agency Ranking
公开(公告)号：KR100361034B1
公开(公告)日：2002-11-21
申请号：KR1020000078679
申请日：2000-12-19
Applicant: 한국과학기술연구원
IPC: G02B6/00
Abstract: 본 발명은 마하젠더 간섭기형 전광 파장변환기의 전광 앤드(AND) 논리 연산방법에 관한 것이다. 보다 상세하게는 비선형 특성을 갖는 마하젠더 간섭계 형태의 반도체 광증폭기로 구성된 XPM 파장변환기를 이용하여 소형이면서 작은 입력강도의 초고속 논리연산을 구현토록 하는 기술에 관한 것이다.
본 발명에 따르면, 일정 수준의 연산속도를 구현하기 위한 광펄스를 생성하는 광섬유 모드록 레이저와; 광출력을 감쇠시키는 광 감쇠기와; 다중화기와; 제 1광지연선로와; 50 : 50으로 광세기를 분리시키는 3-dB 광섬유커플러와; 최대의 광파장 효율을 얻기 위한 편광상태를 맞추기 위한 편광조절기와; 제 2광지연선로와; 광파장을 전송시키는 광 격리기와; XPM 파장변환기와; 어븀첨가광증폭기와; 광파장 필터와; 광신호분석기를 포함하여 구성됨으로서
상기 XPM 파장변환기에서 도파로 부분의 전류를 조절하여 신호 A의 출력이 정상적으로 신호 C로 출력되도록 간섭계를 구성하는 두 도파로의 전류를 조절하고, 신호 A의 지연시간을 적절히 조절하여 신호 B와 동조시킴으로서 앤드(AND) 논리 연산을 수행하는 것을 특징으로 하는 마하젠더 간섭기형 전광 파장변환기의 전광 앤드 논리 연산방법이 제시된다.-
公开(公告)号：KR1020010077692A
公开(公告)日：2001-08-20
申请号：KR1020000005660
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to extend the gain bandwidth by forming differently the thickness of quantum well layers and by using all wave lengths of the light irradiated from each quantum well layer. CONSTITUTION: In a semiconductor optical amplifier, the structure of quantum well layers comprises InGaAs/InGaAsP/InP. The quantum well layers of different thickness are used as a combination. The combination of the quantum well layers has different barrier. The farther from p-layer, the thinner quantum well layer is arranged. Therefore, the quantum well layers have flat gain characteristic in a wide area and low critical current.
Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，以通过不同地形成量子阱层的厚度并且通过使用从每个量子阱层照射的光的全部波长来扩展增益带宽。 构成：在半导体光放大器中，量子阱层的结构包括InGaAs / InGaAsP / InP。 使用不同厚度的量子阱层作为组合。 量子阱层的组合具有不同的屏障。 距离p层越远，布置了较薄的量子阱层。 因此，量子阱层在广泛区域和低临界电流下具有平坦增益特性。
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公开(公告)号：KR101711524B1
公开(公告)日：2017-03-02
申请号：KR1020150100581
申请日：2015-07-15
Applicant: 한국과학기술연구원
CPC classification number: H01L29/516 , H01L29/41775 , H01L29/42364 , H01L29/42372 , H01L29/66984 , H01L43/00
Abstract: 위상절연체를포함하는트랜지스터를제공한다. 트랜지스터는, i) 기판, ii) 기판위에위치한위상절연체층, iii) 위상절연체층위에위치한드레인전극, iv) 드레인전극과이격되고, 위상절연체층위에위치하며, 강자성체를포함하는소스전극, v) 소스전극위에위치한터널접합층, 및 vi) 터널접합층위에위치한게이트전극을포함한다. 위상절연체층의스핀방향이그 표면에흐르는전류에의해고정되고, 게이트전극에인가되는전압에따라소스전극의스핀방향이기설정된방향으로변한다.
Abstract translation: 公开了包括拓扑绝缘体的晶体管。 晶体管包括：衬底; 设置在基板上的拓扑绝缘体; 设置在拓扑绝缘体上的漏电极; 与所述漏电极分离的源电极，设置在所述拓扑绝缘体上，并且包含铁磁性物质; 设置在源电极上的隧道结层; 以及设置在隧道结层上的栅电极。 拓扑绝缘体的自旋方向由流过其表面的电流固定，并且通过施加到栅电极的电压将源极的自旋方向改变到预定方向。
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公开(公告)号：KR1020170009109A
公开(公告)日：2017-01-25
申请号：KR1020150100581
申请日：2015-07-15
Applicant: 한국과학기술연구원
CPC classification number: H01L29/516 , H01L29/41775 , H01L29/42364 , H01L29/42372 , H01L29/66984 , H01L43/00
Abstract: 위상절연체를포함하는트랜지스터를제공한다. 트랜지스터는, i) 기판, ii) 기판위에위치한위상절연체층, iii) 위상절연체층위에위치한드레인전극, iv) 드레인전극과이격되고, 위상절연체층위에위치하며, 강자성체를포함하는소스전극, v) 소스전극위에위치한터널접합층, 및 vi) 터널접합층위에위치한게이트전극을포함한다. 위상절연체층의스핀방향이그 표면에흐르는전류에의해고정되고, 게이트전극에인가되는전압에따라소스전극의스핀방향이기설정된방향으로변한다.
Abstract translation: 提供了包括相位绝缘体的晶体管。 Iv）源电极，其与漏电极隔开并位于相绝缘体层上，源电极包括铁磁材料; v）位于相绝缘体层上方的源电极; 位于源电极之上的隧道结层，以及vi）位于隧道结层之上的栅电极。 相绝缘体层的自旋方向由其表面上流动的电流固定，并且源电极的自旋方向根据施加到栅电极的电压在设定方向上改变。
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公开(公告)号：KR100405940B1
公开(公告)日：2003-12-18
申请号：KR1020010010094
申请日：2001-02-27
Applicant: 한국과학기술연구원
IPC: H01S3/136
Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.
Abstract translation: 目的：提供水平耦合型激光二极管以通过使用具有不同传播常数的两个有源元件来扩大可变波长范围。 组成：水平耦合型激光二极管通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成。 光放大器（200）具有与激光二极管（100）不同的传播常数。 第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部分和下端部分中，以便将电流施加到激光二极管（100）和光放大器（200） ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。
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