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    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS
    2.
    发明申请
    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS 审中-公开
    表面电子显示器件和制造工艺

    公开(公告)号：WO9832145A3

    公开(公告)日：1998-11-19

    申请号：PCT/US9723718

    申请日：1997-12-30

    Applicant: ADVANCED VISION TECH INC

    Inventor： POTTER MICHAEL D

    IPC: C09K11/54 ,  C09K11/67 ,  H01J1/304 ,  H01J1/36 ,  H01J3/02 ,  H01J9/02 ,  H01J9/14 ,  H01J9/22 ,  H01J29/18 ,  H01J29/20 ,  H01J31/12 ,  H01J

    CPC classification number: H01J3/022 ,  H01J9/025

    Abstract: A device useful as a display element has an electron emitter (40) and an anode (30) disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion (80) at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter (10) and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion (80). The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer (75) with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodeluminescent phosphor (35) for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

    Surface electron display device and fabrication process
    4.
    发明专利
    Surface electron display device and fabrication process 未知

    公开(公告)号：AU5805298A

    公开(公告)日：1998-08-07

    申请号：AU5805298

    申请日：1997-12-30

    Applicant: ADVANCED VISION TECH INC

    Inventor： POTTER MICHAEL D

    IPC: C09K11/54 ,  C09K11/67 ,  H01J1/304 ,  H01J1/36 ,  H01J3/02 ,  H01J9/02 ,  H01J9/14 ,  H01J9/22 ,  H01J29/18 ,  H01J29/20 ,  H01J31/12 ,  H01J29/00 ,  H01J31/00

    Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodoluminescent phosphor for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS
    5.
    发明专利
    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS 未知

    公开(公告)号：CA2274664A1

    公开(公告)日：1998-07-23

    申请号：CA2274664

    申请日：1997-12-30

    Applicant: ADVANCED VISION TECH INC

    Inventor： POTTER MICHAEL D

    IPC: C09K11/54 ,  C09K11/67 ,  H01J1/304 ,  H01J1/36 ,  H01J3/02 ,  H01J9/02 ,  H01J9/14 ,  H01J9/22 ,  H01J29/18 ,  H01J29/20 ,  H01J31/12 ,  H01J21/00 ,  H01J9/00 ,  H01J1/30

    Abstract: A device useful as a display element has an electron emitter (40) and an anode (30) disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion (80) at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter (10) and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion (80). The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer (75) with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodeluminescent phosphor (35) for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE
    7.
    发明公开
    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE 失效
    一种用于生产密闭室在衬底

    公开(公告)号：EP0829094A4

    公开(公告)日：1998-06-17

    申请号：EP96916893

    申请日：1996-05-31

    Applicant: ADVANCED VISION TECH INC ,  POTTER MICHAEL D

    Inventor： POTTER MICHAEL D

    IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40

    CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

    Abstract: A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE
    8.
    发明专利
    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE 未知

    公开(公告)号：CA2221443C

    公开(公告)日：2001-09-25

    申请号：CA2221443

    申请日：1996-05-31

    Applicant: POTTER MICHAEL D ,  ADVANCED VISION TECH INC

    Inventor： POTTER MICHAEL D

    IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40 ,  H01J9/00

    Abstract: A process for fabricating, in a planar substrate, a hermetically sealed cham ber for a field-emission cell or the like, allows operat ing the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or g as, and methods of including an optional quantity of gettering material. An exam ple of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) pa rallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically al igned to that edge. The simplified devices are specially adapted for field emission d isplay arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication pr ocess allow the use of conductive or insulating substrat es (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

    INSULATED-GATE ELECTRON FIELD EMISSION DEVICES AND THEIR FABRICATION PROCESSES
    9.
    发明专利
    INSULATED-GATE ELECTRON FIELD EMISSION DEVICES AND THEIR FABRICATION PROCESSES 未知

    公开(公告)号：CA2355660A1

    公开(公告)日：2001-02-01

    申请号：CA2355660

    申请日：2000-07-24

    Applicant: ADVANCED VISION TECH INC

    Inventor： POTTER MICHAEL D

    IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J31/12

    Abstract: A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a microchamber (110). The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted fro m a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater th an one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, t he gate current component of the emitter current consists of displacement curre nt only, and direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchamber, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a gate electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices, including formation in situ of a vacuum microchamber.

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