中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.026 seconds)

    EXPOSURE APPARATUS
    1.
    发明公开
    EXPOSURE APPARATUS 有权
    接触设备

    公开(公告)号：EP3208826A1

    公开(公告)日：2017-08-23

    申请号：EP16204969.6

    申请日：2016-12-19

    Applicant: Advantest Corporation

    Inventor： HAMAGUCHI, Shinichi ,  TANAKA, Hitoshi ,  TOKUNO, Atsushi ,  KOJIMA, Shinichi ,  YAMADA, Akio

    IPC: H01J37/317 ,  H01J37/10 ,  H01J37/04

    CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/065 ,  H01J37/09 ,  H01J37/10 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/06308 ,  H01J2237/0835 ,  H01J2237/31754

    Abstract: The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

    Abstract translation: 本发明提供了一种曝光设备（100），其包括形成具有不同照射位置的带电粒子束的样本模块（122）。 所述形成模块（122）包括：粒子源（20），其从发光区域（21）发射带电粒子束，所述发射区域的长度方向的宽度与所述长度方向正交的宽度方向的宽度不同， ; 具有配置在照明区域（61）内的开口部（62）的光圈阵列装置（60），所述照明区域（61）的长度方向的宽度与所述长度方向正交的宽度方向的宽度不同; 设置在所述粒子源（20）和所述孔径阵列装置（60）之间的照明透镜（30,50）; 以及设置在粒子源（20）与光阑阵列装置（60）之间的光束截面变形装置（40），该光束截面变形装置（40）通过以下动作使带电粒子束的截面形状变形为各向异性形状 一个磁场或一个电场。

    ELECTRON BEAM LITHOGRAPHY SYSTEM AND METHOD FOR ELECTRON BEAM LITHOGRAPHY
    7.
    发明公开
    ELECTRON BEAM LITHOGRAPHY SYSTEM AND METHOD FOR ELECTRON BEAM LITHOGRAPHY 审中-公开
    ELEKTRONENSTRAHLLITHOGRAPHIESYSTEM UND VERFAHREN ZUR ELEKTRONENSTRAHLLITHOGRAPHIE

    公开(公告)号：EP2284864A1

    公开(公告)日：2011-02-16

    申请号：EP08752503.6

    申请日：2008-05-09

    Applicant: Advantest Corporation

    Inventor： YAMADA, Akio ,  KUROKAWA, Masaki

    IPC: H01L21/027 ,  G03F7/20 ,  H01J37/21 ,  H01J37/305

    CPC classification number: H01J37/21 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3174 ,  H01J2237/21

    Abstract: An electron beam lithography apparatus includes an electron gun emitting an electron beam, a deflector deflecting the electron beam, a focus corrector correcting a focus of the electron beam, a storage unit storing exposure data, and a controller correcting the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time, calculates a deflection efficiency indicating a relation between an input signal to the deflector and an amount of beam deflection, and a correction intensity indicating a relation between an input signal to the focus corrector and a beam focus, and writes the electron beam on a sample according to the deflection efficiency and the correction intensity. The constant correction coefficient is determined according to a write position on the sample, and the fluctuating correction coefficient is determined according to a value of fluctuation factor data measured by a measurer.

    Abstract translation: 电子束光刻设备包括发射电子束的电子枪，偏转电子束的偏转器，校正电子束焦点的聚焦校正器，存储曝光数据的存储单元，以及基于常数对曝光数据进行校正的控制器 校正系数与时间通过无关，波动校正系数随时间变化，计算指示偏转器的输入信号与光束偏转量之间的关系的偏转效率，以及表示与焦点的输入信号之间的关系的校正强度 校正器和光束聚焦，并根据偏转效率和校正强度将电子束写入样本。 根据样本的写入位置来确定常数校正系数，并且根据由测量器测量的波动因数数据的值来确定波动校正系数。

    MASK FOR MULTICOLUMN ELECTRON BEAM EXPOSURE, ELECTRON BEAM EXPOSURE DEVICE AND EXPOSURE METHOD EMPLOYING MASK FOR MULTICOLUMN ELECTRON BEAM EXPOSURE
    8.
    发明公开
    MASK FOR MULTICOLUMN ELECTRON BEAM EXPOSURE, ELECTRON BEAM EXPOSURE DEVICE AND EXPOSURE METHOD EMPLOYING MASK FOR MULTICOLUMN ELECTRON BEAM EXPOSURE 有权
    人力资源管理公司（EHKPONTEN-ELEKTRONENSTRAHLBELICHTUNGSANORDNUNGEN UNDERVERHREN）

    公开(公告)号：EP2117035A1

    公开(公告)日：2009-11-11

    申请号：EP07737688.7

    申请日：2007-03-02

    Applicant: Advantest Corporation

    Inventor： YAMADA, Akio ,  YABE, Takayuki ,  TANAKA, Hitoshi

    IPC: H01L21/027

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/09 ,  H01J2237/31776 ,  H01J2237/31794

    Abstract: A mask for exposure, which is used in a multi-column electron beam exposure apparatus having multiple column cells, includes a stencil pattern group constituted by multiple stencil patterns for each of the multiple column cells. The stencil pattern groups are arranged at intervals corresponding to arrangement intervals of the multiple column cells, and all of the stencil pattern groups are formed on a single mask substrate. The stencil pattern groups include: a first stencil pattern group formed within a deflectable range of an electron beam of each of the multiple column cells; and a second stencil pattern group having two or more of the first stencil patterns.

    Abstract translation: 用于具有多个列单元的多列电子束曝光设备中的用于曝光的掩模包括由多个列单元中的每一个的多个模板图案构成的模板图案组。 模板图案组以对应于多列单元的排列间隔的间隔排列，并且所有模板图案组形成在单个掩模基板上。 模板图案组包括：形成在多个柱单元中的每一个的电子束的可偏转范围内的第一模板图案组; 以及具有两个或更多个第一模板图案的第二模板图案组。

    EXPOSURE APPARATUS
    9.
    发明授权
    EXPOSURE APPARATUS 有权
    接触设备

    公开(公告)号：EP3208826B1

    公开(公告)日：2018-04-11

    申请号：EP16204969.6

    申请日：2016-12-19

    Applicant: Advantest Corporation

    Inventor： HAMAGUCHI, Shinichi ,  TANAKA, Hitoshi ,  TOKUNO, Atsushi ,  KOJIMA, Shinichi ,  YAMADA, Akio

    IPC: H01J37/317 ,  H01J37/10 ,  H01J37/04

    CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/065 ,  H01J37/09 ,  H01J37/10 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/06308 ,  H01J2237/0835 ,  H01J2237/31754

    Abstract: The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

Patent Agency Ranking