Abstract:
A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
Abstract:
A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
Abstract:
Semiconductor packaging substrates and processing sequences are described. In an embodiment, a packaging substrate includes a build-up structure, and a patterned metal contact layer partially embedded within the build-up structure and protruding from the build-up structure. The patterned metal contact layer may include an array of surface mount (SMT) metal bumps in a chip mount area, a metal dam structure or combination thereof.
Abstract:
Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), stacked die between the first and second RDLs, and conductive pillars extending between the RDLs. A molding compound may encapsulate the stacked die and conductive pillars between the first and second RDLs.
Abstract:
A bottom package for a PoP (package-on-package) may be formed with a reinforcement layer supporting a thin or coreless substrate. The reinforcement layer may provide stiffness and rigidity to the substrate to increase the stiffness and rigidity of the bottom package and provide better handling of the substrate. The reinforcement layer may be formed using core material, a laminate layer, and a metal layer. The substrate may be formed on the reinforcement layer. The reinforcement layer may include an opening sized to accommodate a die. The die may be coupled to an exposed surface of the substrate in the opening. Metal filled vias through the reinforcement layer may be used to couple the substrate to a top package.
Abstract:
A top package (100) used in a PoP (package-on-package) package includes two memory dies (102A, 102B) stacked with a redistribution layer (RDL) between the die. The first memory die (102A) is encapsulated in an encapsulant (104) and coupled to a top surface of the RDL (106). A second memory die (102B) is coupled to a bottom surface of the RDL. The second memory die is coupled to the RDL with either a capillary underfill material or a non-conductive paste. The RDL includes routing between each of the memory die and one or more terminals (112A, 112B) coupled to the RDL on a periphery of the die.
Abstract:
Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.
Abstract:
A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
Abstract:
Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.