MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

    公开(公告)号:EP4006972A2

    公开(公告)日:2022-06-01

    申请号:EP22150527.4

    申请日:2014-07-29

    Applicant: Apple Inc.

    Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

    MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

    公开(公告)号:EP4006972A3

    公开(公告)日:2022-12-28

    申请号:EP22150527.4

    申请日:2014-07-29

    Applicant: Apple Inc.

    Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

Patent Agency Ranking