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公开(公告)号：US10095131B2
公开(公告)日：2018-10-09
申请号：US15315885
申请日：2015-05-13
Applicant: ASML Netherlands B.V.
Abstract: A method including determining a position of a first pattern in each of a plurality of target portions on a substrate, based on a fitted mathematical model, wherein the first pattern includes at least one alignment mark, wherein the mathematical model is fitted to a plurality of alignment mark displacements (dx, dy) for the alignment marks in the target portions, and wherein the alignment mark displacements are a difference between a respective nominal position of the alignment mark and measured position of the alignment mark; and transferring a second pattern onto each of the target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model includes polynomials Z1 and Z2: Z1=r2 cos(2θ) and Z2=r2 sin(2θ) in polar coordinates (r, θ) or Z1=x2−y2 and Z2=xy in Cartesian coordinates (x, y).
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公开(公告)号：US10719011B2
公开(公告)日：2020-07-21
申请号：US15765489
申请日：2016-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Daan Maurits Slotboom , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier
Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.
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公开(公告)号：US09971251B2
公开(公告)日：2018-05-15
申请号：US14905611
申请日：2014-08-06
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Wolfgang Henke , Thomas Leo Maria Hoogenboom , Pavel Izikson , Paul Frank Luehrmann , Daan Maurits Slotboom , Jens Staecker , Alexander Ypma
CPC classification number: G03F7/70516 , G03F7/70491 , G03F7/70525 , G03F7/70625 , G03F7/70633
Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.
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公开(公告)号：US10444632B2
公开(公告)日：2019-10-15
申请号：US15994400
申请日：2018-05-31
Applicant: ASML Netherlands B.V.
Inventor： Daan Maurits Slotboom , Pieter Jacob Kramer , Martinus Hendrikus Antonius Leenders , Bart Dinand Paarhuis
Abstract: An apparatus and method for performing a measurement operation on a substrate in accordance with one or more substrate alignment models. The one or more substrate alignment models are selected from a plurality of candidate substrate alignment models. The apparatus, which may be a lithographic apparatus, includes an external interface which enables selection of the substrate alignment model(s) and/or alteration of the substrate alignment model(s) prior to the measurement operation.
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公开(公告)号：US10254658B2
公开(公告)日：2019-04-09
申请号：US15274273
申请日：2016-09-23
Applicant: ASML Netherlands B.V.
Inventor： Daan Maurits Slotboom , Arie Jeffrey Den Boef , Martin Ebert
IPC: G03F7/20
Abstract: A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process.
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Patent Agency Ranking
6.发明授权Method of operating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product 有权操作光刻设备的方法，设备制造方法以及相关的数据处理设备和计算机程序产品公开(公告)号：US09507279B2
公开(公告)日：2016-11-29
申请号：US14069287
申请日：2013-10-31
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Paul Frank Luehrmann , Eduardus Johannes Gerardus Boon , Daan Maurits Slotboom , Jean-Philippe Xavier Van Damme , Wolfgang Henke , Alexander Ypma , Marc Jurian Kea
CPC classification number: G03F7/70908 , G03F7/707 , G03F7/7085 , G03F7/70916 , G03F9/70
Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx′) and residual roll (Ryy′). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.
Abstract translation: 将掩模版加载到光刻设备中。 该装置对掩模版进行测量，以便计算用于将图案精确地转印到基底上的对准参数。 执行测试以检测掩模版或其支撑体的可能污染。 任一操作都进行警告，或者停止基板的图案化。 测试使用可以使用对齐模型本身的参数或不同的参数。 可以将完整性参数与反映历史测量的参考值进行比较，使得参数中的突然变化指示污染。 可以从对齐模型的残差计算完整性参数。 在一个例子中，高度残差用于计算残余楔（Rx'）和残余辊（Ryy'）的参数。 从这些，计算表示为高度偏差的完整性参数，并将其与阈值进行比较。
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公开(公告)号：US11809088B2
公开(公告)日：2023-11-07
申请号：US17636452
申请日：2020-07-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Hadi Yagubizade , Min-Seok Kim , Yingchao Cui , Daan Maurits Slotboom , Jeonghyun Park , Jeroen Cottaar
CPC classification number: G03F7/70483
Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.
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公开(公告)号：US10908512B2
公开(公告)日：2021-02-02
申请号：US16061257
申请日：2016-12-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Daan Maurits Slotboom , Michiel Kupers
Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.
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公开(公告)号：US10025193B2
公开(公告)日：2018-07-17
申请号：US15109784
申请日：2014-10-23
Applicant: ASML Netherlands B.V.
Inventor： Hakki Ergün Cekli , Xing Lan Liu , Daan Maurits Slotboom , Wim Tjibbo Tel , Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren
Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.
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公开(公告)号：US12044980B2
公开(公告)日：2024-07-23
申请号：US17296316
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Wim Tjibbo Tel , Daan Maurits Slotboom , Vadim Yourievich Timoshkov , Koen Wilhelmus Cornelis Adrianus Van Der Straten , Boris Menchtchikov , Simon Philip Spencer Hastings , Cyrus Emil Tabery , Maxime Philippe Frederic Genin , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng
IPC: G05B19/418 , G03F7/00
CPC classification number: G03F7/70625 , G03F7/70616 , G05B19/4188 , G03F7/70525
Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
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