公开(公告)号：US11754931B2

公开(公告)日：2023-09-12

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Werkman ,  David Frans Simon Deckers ,  Simon Philip Spencer Hastings ,  Jeffrey Thomas Ziebarth ,  Samee Ur Rehman ,  Davit Harutyunyan ,  Chenxi Lin ,  Yana Cheng

IPC: G03F1/36 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F1/36 ,  G03F7/70508 ,  G03F7/70616

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

公开(公告)号：US11947266B2

公开(公告)日：2024-04-02

申请号：US17297171

申请日：2019-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas Petrus Marcus Brantjes ,  Matthijs Cox ,  Boris Menchtchikov ,  Cyrus Emil Tabery ,  Youping Zhang ,  Yi Zou ,  Chenxi Lin ,  Yana Cheng ,  Simon Philip Spencer Hastings ,  Maxim Philippe Frederic Genin

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70491 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.

公开(公告)号：US11714357B2

公开(公告)日：2023-08-01

申请号：US17363057

申请日：2021-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70491 ,  G03F7/705 ,  G03F7/70658

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US12045555B2

公开(公告)日：2024-07-23

申请号：US16960376

申请日：2019-01-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Vahid Bastani ,  Alexander Ypma ,  Dag Sonntag ,  Everhardus Cornelis Mos ,  Hakki Ergün Cekli ,  Chenxi Lin

IPC: G06F30/30 ,  G06F30/398 ,  G06N5/01 ,  G06N5/04 ,  G06N20/20 ,  G06F119/18

CPC classification number: G06F30/398 ,  G06N5/01 ,  G06N5/04 ,  G06N20/20 ,  G06F2119/18

Abstract: Substrates to be processed are partitioned based on pre-processing data that is associated with substrates before a process step. The data is partitioned using a partition rule and the substrates are partitioned into subsets in accordance with subsets of the data obtained by the partitioning. Corrections are applied, specific to each subset. The partition rule is obtained using decision tree analysis on a training set of substrates. The decision tree analysis uses pre-processing data associated with the training substrates before they were processed, and post-processing data associated with the training substrates after being subject to the process step. The partition rule that defines the decision tree is selected from a plurality of partition rules based on a characteristic of subsets of the post-processing data. The associated corrections are obtained implicitly at the same time.

公开(公告)号：US11443083B2

公开(公告)日：2022-09-13

申请号：US16300380

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yi Zou ,  Chenxi Lin ,  Stefan Hunsche ,  Marinus Jochemsen ,  Yen-Wen Lu ,  Lin Lee Cheong

IPC: G06T7/00 ,  G06F30/20 ,  G03F7/20 ,  G06K9/62 ,  G06F30/398 ,  G06N20/00

Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.

公开(公告)号：US20210132508A1

公开(公告)日：2021-05-06

申请号：US16640088

申请日：2018-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon, Hendreik Celine VAN GORP ,  Chenxi Lin

IPC: G03F7/20 ,  H01L21/66

Abstract: A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.

公开(公告)号：US12055904B2

公开(公告)日：2024-08-06

申请号：US17293373

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Boris Menchtchikov ,  Cyrus Emil Tabery ,  Yi Zou ,  Chenxi Lin ,  Yana Cheng ,  Simon Philip Spencer Hastings ,  Maxime Philippe Frederic Genin

IPC: G06F30/10 ,  G03F7/00 ,  G05B13/02 ,  G05B13/04 ,  G06F30/27 ,  G06N3/045 ,  G06N3/08 ,  G06F119/02 ,  G06F119/22

CPC classification number: G05B13/048 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/706837 ,  G05B13/027 ,  G05B13/042 ,  G06F30/10 ,  G06F30/27 ,  G06N3/045 ,  G06N3/08 ,  G06F2119/02 ,  G06F2119/22

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US11803127B2

公开(公告)日：2023-10-31

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi Lin ,  Cyrus Emil Tabery ,  Hakki Ergün Cekli ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Yi Zou ,  Yana Cheng ,  Maxime Philippe Frederic Genin ,  Tzu-Chao Chen ,  Davit Harutyunyan ,  Youping Zhang

IPC: G03F7/00 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

CPC classification number: G03F7/705 ,  G05B13/027 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/32193 ,  G05B2219/32368 ,  G05B2219/45031

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US11181829B2

公开(公告)日：2021-11-23

申请号：US16640088

申请日：2018-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Cyrus Emil Tabery ,  Hakki Ergün Cekli ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin

IPC: H01L21/66 ,  G03F7/20

Abstract: A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data. Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.

公开(公告)号：US11086229B2

公开(公告)日：2021-08-10

申请号：US16497826

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.