公开(公告)号：US20210080836A1

公开(公告)日：2021-03-18

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20220229373A1

公开(公告)日：2022-07-21

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20200019067A1

公开(公告)日：2020-01-16

申请号：US16335277

申请日：2017-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cedric Desire GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.