公开(公告)号：US20200019067A1

公开(公告)日：2020-01-16

申请号：US16335277

申请日：2017-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cedric Desire GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20210080836A1

公开(公告)日：2021-03-18

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20190121248A1

公开(公告)日：2019-04-25

申请号：US16090713

申请日：2017-03-08

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Günes NAKIBOGLU ,  Lowell Lane BAKER ,  Ruud Hendrikus Martinus Johannes BLOKS ,  Hakki Ergün CEKLI ,  Geoffrey Alan SCHULTZ ,  Laurentius Johannes Adrianus VAN BOKHOVEN ,  Frank Johannes Jacobus VAN BOXTEL ,  Jean-Philippe Xavier VAN DAMME ,  Christopher Charles WARD

IPC: G03F7/20

CPC classification number: G03F7/70875

Abstract: A patterning apparatus for a lithographic apparatus, the patterning apparatus including a patterning device support structure configured to support a patterning device having a planar surface; a patterning device conditioning system including a first gas outlet configured to provide a first gas flow over the planar surface in use and a second gas outlet configured to provide a second gas flow over the planar surface in use, wherein the first gas outlet and the second gas outlet are arranged at different distances perpendicular to the planar surface; and a control system configured to independently control a first momentum of gas exiting the first gas outlet and a second momentum of gas exiting the second gas outlet or to independently vary the first gas flow and/or the second gas flow over the planar surface of the patterning device.

公开(公告)号：US20190094721A1

公开(公告)日：2019-03-28

申请号：US16132520

申请日：2018-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20180292761A1

公开(公告)日：2018-10-11

申请号：US15557802

申请日：2015-12-10

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün CEKLI ,  Xing Lan LIU ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F7/20

Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

公开(公告)号：US20220229373A1

公开(公告)日：2022-07-21

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20210389677A1

公开(公告)日：2021-12-16

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Yi ZOU ,  Yana CHENG ,  Maxime Philippe Frederic GENIN ,  Tzu-Chao CHEN ,  Davit HARUTYUNYAN ,  Youping ZHANG

IPC: G03F7/20 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US20200272061A1

公开(公告)日：2020-08-27

申请号：US16650520

申请日：2018-09-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20190339211A1

公开(公告)日：2019-11-07

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian KEA ,  Marcel Theodorus Maria VAN KESSEL ,  Masashi ISHIBASHI ,  Chi-Hsiang FAN ,  Hakki Ergün CEKLI ,  Youping ZHANG ,  Maurits VAN DER SCHAAR ,  Liping REN

IPC: G01N21/956 ,  G03F7/20 ,  H01L21/66 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US20190101837A1

公开(公告)日：2019-04-04

申请号：US16086343

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün CEKLI ,  Günes NAKÍBOGLU ,  Frank Johannes Jacobus ,  Jean-Philippe XAVIER ,  Richard Johannes Franciscus

IPC: G03F7/20

Abstract: A patterning device cooling system for thermally conditioning a patterning device of a lithographic apparatus, wherein the patterning device in use, is being irradiated by exposure radiation, wherein the patterning device cooling system has: a thermal conditioner configured to thermally condition the patterning device; and a controller configured to control the thermal conditioner to thermally condition the patterning device dependent on an amount of the exposure radiation absorbed by the patterning device.