公开(公告)号：US20200019067A1

公开(公告)日：2020-01-16

申请号：US16335277

申请日：2017-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cedric Desire GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20210080836A1

公开(公告)日：2021-03-18

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20190094721A1

公开(公告)日：2019-03-28

申请号：US16132520

申请日：2018-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20220229373A1

公开(公告)日：2022-07-21

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20200272061A1

公开(公告)日：2020-08-27

申请号：US16650520

申请日：2018-09-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20220365446A1

公开(公告)日：2022-11-17

申请号：US17874582

申请日：2022-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk RIJPSTRA ,  Cornelis Johannes Henricus LAMBREGTS ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Cédric Désiré GROUWSTRA ,  Chi-Fei NIEN ,  Weitian KOU ,  Chang-Wei CHEN ,  Pieter Gerardus Jacobus SMORENBERG

IPC: G03F7/20

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US20200081356A1

公开(公告)日：2020-03-12

申请号：US16686418

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20200050180A1

公开(公告)日：2020-02-13

申请号：US16340771

申请日：2017-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Min-Sub HAN

IPC: G05B19/418

Abstract: A lithographic process is performed on a plurality of semiconductor substrates. The method includes selecting one or more of the substrates as one or more sample substrates. Metrology steps are performed only on the selected one or more sample substrates. Based on metrology results of the selected one or more sample substrates, corrections are defined for use in controlling processing of the substrates or of future substrates. The selection of the one or more sample substrates is based at least partly on statistical analysis of object data measured in relation to the substrates. The same object data or other data can be used for grouping substrates into groups. Selecting of one or more sample substrates can include selecting substrates that are identified by the statistical analysis as most representative of the substrates in their group and/or include elimination of one or more substrates that are identified as unrepresentative.

公开(公告)号：US20230168594A1

公开(公告)日：2023-06-01

申请号：US17920014

申请日：2021-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Roy WERKMAN ,  Weitian KOU

IPC: G03F9/00

CPC classification number: G03F9/7023 ,  G03F9/7088

Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.

公开(公告)号：US20210080837A1

公开(公告)日：2021-03-18

申请号：US16954384

申请日：2018-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk RIJPSTRA ,  Cornelis Johannes Henricus LAMBREGTS ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Cédric Désiré GROUWSTRA ,  Chi-Fei NIEN ,  Weitian KOU ,  Chang-Wei CHEN ,  Pieter Gerardus Jacobus SMORENBERG

IPC: G03F7/20 ,  G05B19/404

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.