公开(公告)号：US20210149312A1

公开(公告)日：2021-05-20

申请号：US16644206

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/20 ,  H01L21/66 ,  G06T7/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20240012337A1

公开(公告)日：2024-01-11

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/00 ,  G06T7/00 ,  H01L21/66 ,  G06F30/20

CPC classification number: G03F7/70625 ,  G06T7/0004 ,  H01L22/20 ,  G06F30/20 ,  H01L21/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20210382400A1

公开(公告)日：2021-12-09

申请号：US17286020

申请日：2019-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy ANUNCIADO

IPC: G03F7/20

Abstract: A method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a substrate, the method including: obtaining a delta image which relates to a difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form the first and second features; selecting a plurality of pixels within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

公开(公告)号：US20240004309A1

公开(公告)日：2024-01-04

申请号：US18039712

申请日：2021-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Hendrik Adriaan VAN LAARHOVEN ,  Alok VERMA ,  Roy ANUNCIADO ,  Hermanus Adrianus DILLEN ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  H01L22/12 ,  H01L22/20

Abstract: A method of monitoring a semiconductor manufacturing process. The method includes obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein the local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of the semiconductor manufacturing process. Local performance parameter data is determined from the high resolution metrology data using the first trained model. The first trained model is operable to determine the local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on the high resolution metrology data including only metrology data performed prior to any such etch step.

公开(公告)号：US20210080838A1

公开(公告)日：2021-03-18

申请号：US16966596

申请日：2019-01-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Marc Jurian KEA ,  Roy ANUNCIADO

IPC: G03F7/20

Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.

公开(公告)号：US20250147436A1

公开(公告)日：2025-05-08

申请号：US18832408

申请日：2023-01-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Huaichen ZHANG ,  Maxim PISARENCO ,  Vahid BASTANI ,  Konstantin Sergeevich NECHAEV ,  Roy ANUNCIADO ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F7/00

Abstract: A method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method includes: obtaining layout data relating to a layout of a pattern to be applied to the at least one structure, the pattern including the at least one structure; and obtaining a trained model, having been trained on metrology data and the layout data to infer a value and/or probability metric relating to a parameter of interest from at least the layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate. A value and/or probability metric is determined relating to the parameter of interest at one or more locations on the substrate different from the measurement locations from at least layout data using the trained model.

公开(公告)号：US20190086810A1

公开(公告)日：2019-03-21

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Mark John MASLOW ,  Roy ANUNCIADO ,  Marinus JOCHEMSEN ,  Hugo Augustinus Joseph CRAMER ,  Thomas THEEUWES ,  Paul Christiaan HINNEN

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.