公开(公告)号：US20250028254A1

公开(公告)日：2025-01-23

申请号：US18712560

申请日：2022-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Huaichen ZHANG ,  Vadim Yourievich TIMOSHKOV ,  Cyrus Emil TABERY ,  Marc HAUPTMANN ,  Oleksandr KHODKO

IPC: G03F7/00

Abstract: A method for determining a mechanical property of a layer applied to a substrate. The method includes obtaining input data including metrology data relating to the layer and layout data relating to a layout of a pattern to be applied in the layer. A first model or first model term is used to determine a global mechanical property related to the layer based on at least the input data; and at least one second model or at least one second model term is used to predict a mechanical property distribution or associated overlay map based on the first mechanical property and the layout data, the mechanical property distribution describing the mechanical property variation over the layer.

公开(公告)号：US20250013158A1

公开(公告)日：2025-01-09

申请号：US18712671

申请日：2022-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Huaichen ZHANG ,  Ruben Cornelis MAAS ,  Syam Parayil VENUGOPALAN ,  Jan Wouter BIJLSMA

IPC: G03F7/00

Abstract: A method and system for designing a mark for use in imaging of a pattern on a substrate using a lithographic process in a lithographic apparatus. The method includes obtaining a mark construction, obtaining a spatial variation of a geometric parameter associated with the mark construction, and determining a geometry design of individual patterns of a mark based on the spatial variation and a spatial location of the mark.

公开(公告)号：US20250147436A1

公开(公告)日：2025-05-08

申请号：US18832408

申请日：2023-01-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Huaichen ZHANG ,  Maxim PISARENCO ,  Vahid BASTANI ,  Konstantin Sergeevich NECHAEV ,  Roy ANUNCIADO ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F7/00

Abstract: A method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method includes: obtaining layout data relating to a layout of a pattern to be applied to the at least one structure, the pattern including the at least one structure; and obtaining a trained model, having been trained on metrology data and the layout data to infer a value and/or probability metric relating to a parameter of interest from at least the layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate. A value and/or probability metric is determined relating to the parameter of interest at one or more locations on the substrate different from the measurement locations from at least layout data using the trained model.

公开(公告)号：US20230408931A1

公开(公告)日：2023-12-21

申请号：US18035286

申请日：2021-11-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Huaichen ZHANG ,  Cyrus Emil TABERY

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/706837 ,  G03F7/70633 ,  H01L22/20 ,  G03F7/70683 ,  G03F7/70625

Abstract: An apparatus and a method for generating a metrology mark structure that can be formed on a substrate for measuring overlay characteristics induced by one or more processes performed on the substrate by determining features for the metrology mark structure based on a pattern distribution. The method involves obtaining a function to characterize an overlay fingerprint induced by a process performed on a substrate. Based on the function, a pattern distribution is derived, the pattern distribution being indicative of a number of features (e.g., indicative of density) within a portion of the substrate. Based on the pattern distribution, a physical characteristic (e.g., shape, size, etc.) of the features of the metrology mark structure is determined.

公开(公告)号：US20220350254A1

公开(公告)日：2022-11-03

申请号：US17621494

申请日：2020-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim PISARENCO ,  Maurits VAN DER SCHAAR ,  Huaichen ZHANG ,  Marie-Claire VAN LARE

IPC: G03F7/20

Abstract: A method for applying a deposition model in a semiconductor manufacturing process. The method includes predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model can be calibrated using experimental cross-section profile information from a layer of a physical substrate. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model includes training the machine-learning model. The metrology target design may include an alignment metrology target design or an overlay metrology target design, for example.