Abstract:
An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.
Abstract:
Electrical biasing of ultrasonic transducers of an ultrasound device is described. The ultrasonic transducers may be capacitive micromachined ultrasonic transducers (CMUTs). The ultrasonic transducers may be grouped together, with the different groups receiving different bias voltages. The bias voltages for the various groups of ultrasonic transducers may be selected to account for differences between the groups.
Abstract:
Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.