公开(公告)号：JPH08274183A

公开(公告)日：1996-10-18

申请号：JP28050295

申请日：1995-10-27

Applicant: CONS RIC MICROELETTRONICA

Inventor： JIYOBUANNA KATSUCHIOORA ,  SARUBUATOORE REONARUDEI ,  JIYANPIERO MONTARUBAANO

IPC: H01L21/8234 ,  H01L27/06 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To remove a layer containing the existence of a parasitic transistor which is not desirable with former constitution, by providing at least one N channel-type MOS transistor stored in a well which is directly brought into contact with an isolation well for a control circuit for semiconductor device, which is formed on a substrate where a first conductivity type dopant is doped. SOLUTION: An integrated circuit is provided with a first epitaxial layer 2 which is grown on a substrate 1 and to which a first conductivity type dopant is doped and the isolation well to which a second conductivity type dopant is doped. The control circuit is provided with at least a first control transistor M1 to which a second conductivity type dopant is doped and which is formed in a first well 8 formed in the isolation well.